Au Generation Centres Doped N(+)-Si: Hole-Injection Adjustable Anode for Efficient Organic Light Emission

Y. Z. Li,G. Z. Ran,W. Q. Zhao,G. G. Qin

DOI: https://doi.org/10.1088/0022-3727/41/15/155107

2008-01-01

Abstract:An organic light-emitting diode (OLED) with an n-Si-anode usually has an efficiency evidently lower than the OLED with the same structure with a p-Si-anode due to insufficient hole injection from the n-Si anode compared with the p-Si-anode. In this study, we find that introducing Au as generation centres with a suitable concentration into the n(+)-Si anode can enhance hole injection to match electron injection and then considerably promote the power efficiency. With optimizing Au generation centre concentration in the n(+)-Si anode, the OLED with a structure of n(+)-Si: Au/NPB/AlQ/Sm/Au reaches a highest power efficiency of 1.0 lm W-1, evidently higher than the reported highest power efficiency of 0.2 lm W-1 for its p-Si-anode counterpart. Furthermore, when the electron injection is enhanced by adopting BPhen: Cs2CO3 partly instead of AlQ as the electron transport material, and the Au generation centre concentration in the n(+)-Si anode is promoted correspondingly, then a highest power efficiency of 1.8 lm W-1 is reached. The role of Au generation centres in the n(+)-Si anode is discussed.