Inverted Top-Emission Organic Light-Emitting Device with N-Type Silicon As Cathode

W. Q. Zhao,G. Z. Ran,W. J. Xu,G. G. Qin
DOI: https://doi.org/10.1088/0022-3727/41/3/035106
2008-01-01
Abstract:Top-emission organic light-emitting devices (OLEDs) with configuration of n-Si (cathode)/Au : Sb 2 nm/Sm 4 nm/AlQ 60 nm/NPB 60 nm/V2O5 10 nm/Au 7 nm (anode) are reported on. We have found that high surface electron concentration and surface modification of n-Si are beneficial to the electron injection. The power efficiency of a device with a 10(-3) Omega cm n-Si/Au : Sb cathode is 10 times more than that of a device with a 10 Omega cm n-Si/Au cathode. With an optimized thickness of V2O5, such a device exhibits much higher electroluminescence efficiency (0.8 lm W-1) than the conventional top-emission OLEDs with p-Si or n-Si anodes reported on previously (0.2 lm W-1).
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