Improved Light Outcoupling For Top-Emitting Organic Light-Emitting Devices

Shufen Chen,Zhonghai Jie,Zhenyuan Zhao,Gang Cheng,Zhijun Wu,Yi Zhao,Baofu Quan,Shiyong Liu,Xuemin Li,Wenfa Xie

DOI: https://doi.org/10.1063/1.2236224

IF: 4

2006-01-01

Applied Physics Letters

Abstract:Light outcoupling for the top-emitting organic light-emitting device (TEOLED) with the structure of Si/SiO2/Ag/Ag2O/4,4('), 4(')-tris(3-methylphenylphenylamino)triphenylamine/4, 4(')-bis[N-(1-naphthyl-1-)-N-phenyl-amino]-biphenyl/tris-(8-hydroxyquinoline) aluminum (Alq(3))/LiF/Al/Ag is improved by optimizing the semitransparent Al/Ag cathode and employing a ZnS top-capping layer. To both provide a fine electron injection and reduce Al absorption in the visible area, Al thickness is adjusted to 0.3 nm. With another 32-nm-thick ZnS film as a refractive index-matching layer onto the optimized Al (0.3 nm)/Ag (18 nm) electrode, the maximum luminance and efficiency for the TEOLED based on Alq(3) emission reach 145 474 cd/m(2) (13 V) and 12.2 cd/A (5 V), respectively. (c) 2006 American Institute of Physics.