Abstract:ZnO nanowire inorganic/organic hybrid ultraviolet (UV) light-emitting diodes (LEDs) have attracted considerable attention as they not only combine the high flexibility of polymers with the structural and chemical stability of inorganic nanostructures but also have a higher light extraction efficiency than thin film structures. However, up to date, the external quantum efficiency of UV LED based on ZnO nanostructures has been limited by a lack of efficient methods to achieve a balance between electron contributed current and hole contributed current that reduces the nonradiative recombination at interface. Here we demonstrate that the piezo-phototronic effect can largely enhance the efficiency of a hybridized inorganic/organic LED made of a ZnO nanowire/p-polymer structure, by trimming the electron current to match the hole current and increasing the localized hole density near the interface through a carrier channel created by piezoelectric polarization charges on the ZnO side. The external efficiency of the hybrid LED was enhanced by at least a factor of 2 after applying a proper strain, reaching 5.92%. This study offers a new concept for increasing organic LED efficiency and has a great potential for a wide variety of high-performance flexible optoelectronic devices.

Improvement of the charge imbalance caused by the use of a p-type silicon anode in an organic light-emitting diode

Largely Enhanced Efficiency In Zno Nanowire/P-Polymer Hybridized Inorganic/Organic Ultraviolet Light-Emitting Diode By Piezo-Phototronic Effect

Improving charge-injection balance and cathode transmittance of top-emitting organic light-emitting device with p-type silicon anode

Passivated P-Type Silicon: Hole Injection Tunable Anode Material For Organic Light Emission

Experimental study of the organic light emitting diode with a p-type silicon anode

Improvement of Electron–hole Injection Balance in Si-anode Organic Light-Emitting Diodes by Using Enhanced Electron Injection Organic of Fluorinated Tris-(8-hydroxy-quinolinato) Aluminum

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Effects of Organic/Organic Interface on Recombination Efficiency in Double-Layer Organic Diodes

Improving Performance of Si/CdS Micro-/Nanoribbon P-N Heterojunction Light Emitting Diodes by Trenched Structure

Electron-irradiated N+-Si As Hole Injection Tunable Anode of Organic Light-Emitting Diode

Organic Light-Emitting Diodes with N-Type Silicon Anode

A Top-Emission Organic Light-Emitting Diode with a Silicon Anode and an Sm∕Au Cathode

Effects of Resistivity of a P‐si Chip on the Light‐emitting Efficiency of a Top‐emission Organic Light‐emitting Diode with the P‐si Chip As the Anode

Enhanced Hole Injection in a Bilayer Vacuum-Deposited Organic Light-Emitting Device Using a P-Type Doped Silicon Anode

Hybrid Organic Light Emitting Device with Silicon-Rich Oxide As Hole Transporting Layer

Improvement in performance of organic light-emitting diodes by adjusting charge-carrier mobility in organic/inorganic hybrid hole transporting layer

The enhanced electron injection by fluorinated tris-(8-hydroxy-quinolinato) aluminum derivatives in high efficient Si-anode OLEDs

Au Generation Centres Doped N(+)-Si: Hole-Injection Adjustable Anode for Efficient Organic Light Emission

Indium Tin Oxide Anode Self-Assembled Monolayer Modification for Device Performance Improvement of Organic Light-Emitting Diodes

Improved Hole Injection And Transport Of Organic Light-Emitting Devices With An Efficient P-Doped Hole-Injection Layer

Efficient Organic Light-Emitting Diodes Using Polycrystalline Silicon Thin Films As Semitransparent Anode