Abstract:The acidic (pKa ≈1.5–2.5) and hygroscopic nature of poly(3,4-ethylene dioxythiophene) polystyrene sulfonate, used as a common hole-injection layer in optoelectronic devices, has a detrimental effect on device stability and is associated with well established device failure mechanisms. In this work, a process with a high green index hole-injection layer material (V2O5) and low surface roughness (RMS roughness ≈1.3 nm) was developed for demonstrating a hybrid polymer–inorganic perovskite light-emitting diode. Test devices with the new hole-injection layer demonstrate nearly identical maximum current efficiencies (4.23 vs 4.19 cd/A), and luminous efficacies (2.99 vs 2.32 lm/W) when compared to a control device fabricated with the conventional hole-injection layer. Furthermore, the peak brightness was achieved at a current density one-third of the value for the control device. To examine the transport of holes in the above hole-injection layer, we carried out device simulations based on a physical charge control model, including defect-assisted tunneling for hole injection. Close agreement for current–voltage characteristics is observed. Experimentally measured mobility in the device and measured radiative lifetimes were found to be sufficient to achieve this agreement without resorting to the introduction of a sheet charge at the injection interface. Despite the use of a bulk-heterojunction device architecture, the model predicts high radiative recombination rates [≈5.6×1022/(cm3s)] in the emissive layer, consistent with the measured photophysical properties for the active film, suggesting effective passivation of non-radiative surface states.

Enhanced Hole Injection in a Bilayer Vacuum-Deposited Organic Light-Emitting Device Using a P-Type Doped Silicon Anode

Electron-irradiated N+-Si As Hole Injection Tunable Anode of Organic Light-Emitting Diode

Improved Hole Injection And Transport Of Organic Light-Emitting Devices With An Efficient P-Doped Hole-Injection Layer

Hole-injection Mechanisms of Organic Light Emitting Diodes with Si Anodes

Enhanced Hole Injection Characteristics of a Top Emission Organic Light-Emitting Diode with Pure Aluminum Anode

Experimental study of the organic light emitting diode with a p-type silicon anode

Role of Hole Playing in Improving Performance of Organic Light-Emitting Devices with an Al2o3 Layer Inserted at the Cathode-Organic Interface

A Top-Emission Organic Light-Emitting Diode with a Silicon Anode and an Sm∕Au Cathode

Modification of the Hole Injection Barrier in Organic Light-Emitting Devices Studied by Ultraviolet Photoelectron Spectroscopy

Passivated P-Type Silicon: Hole Injection Tunable Anode Material For Organic Light Emission

Superior Hole Injection Material PEGDT/TPF/PVDF with p-Doping Capability for Highly Efficient Solution-Processed Organic Light-Emitting Diode

Hybrid Organic Light Emitting Device with Silicon-Rich Oxide As Hole Transporting Layer

Organic Light-Emitting Diodes with N-Type Silicon Anode

Enhanced Hole Injection in Organic Light-Emitting Devices by Using Fe3O4 As an Anodic Buffer Layer

High Luminance Organic Light-Emitting Diodes with Efficient Multi-Walled Carbon Nanotube Hole Injectors

Hybrid Organic Light-Emitting Device with Inorganic Mobility-Tunable Hole Transport Layer of Silicon-Rich Silicon Oxide

Defect-assisted hole transport through transition metal oxide-based injection layers for passivated nanocrystalline CsPbBr3 emissive thin films: A combined experimental and modeling study

A step-wise bilayered hole-injection layer composed of vanadium oxide and PEDOT:PSS for simultaneously enhancing efficiency and stability of organic light-emitting diodes

Improvement of the charge imbalance caused by the use of a p-type silicon anode in an organic light-emitting diode

Systematic Investigation of Surface Modification by Organosiloxane Self-Assembled on Indium-Tin Oxide for Improved Hole Injection in Organic Light-Emitting Diodes

Low-voltage Top-Emitting Organic Light-Emitting Devices with an Organic Double-Heterojunction Structure