Abstract:The development of high-performance organic light-emitting diodes (OLEDs) has become a current trend in the fields of display and lighting. However, the low hole-injection efficiency and consequent carrier imbalance seriously restrict the device performance of OLEDs. In this work, a solution-processable inorganic/organic bilayer composed of vanadium oxide (VO x )/poly(3,4-ethylenedioxythiophene):poly-(styrene sulfonate) (PEDOT:PSS) was reported as a hole-injection layer (HIL) in OLED to construct the matched interfacial energy level alignment that aimed at modifying hole-injection. This strategy not only facilitated the formation of a smooth PEDOT:PSS overlayer in the VO x /PEDOT:PSS bilayer, but also improved the hole-injection across the interface through the construction of step-wise energy level structure and hence enhanced carrier balance in device. Consequently, the device with VO x /PEODT:PSS bilayered HIL exhibited a maximum current efficiency of 67.23 cd A −1 and a maximum external quantum efficiency of 19.17 %, which were obviously superior to those of the reference devices with individual VO x HIL (54.85 cd A −1 and 15.58 %, respectively) and individual PEDOT:PSS HIL (58.74 cd A −1 and 16.84 %, respectively). Moreover, it was found that the stability of bilayered HIL-based device was improved substantially because the stable VO x layer effectively prevented the corrosion of indium tin oxide (ITO) anode by PEDOT:PSS. The study highlights a promising HIL for developing high-performance OLEDs.

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Systematic Investigation of Surface Modification by Organosiloxane Self-Assembled on Indium-Tin Oxide for Improved Hole Injection in Organic Light-Emitting Diodes

Tuning Hole-Injection in Organic-Light Emitting Diodes with Self-Assembled Monolayers

Enhanced Hole Injection in Organic Light-Emitting Devices by Using Fe3O4 As an Anodic Buffer Layer

Improved Hole Injection And Transport Of Organic Light-Emitting Devices With An Efficient P-Doped Hole-Injection Layer

Hole injection control of electron blocking layer for broad recombination zone and low-efficiency roll-off in phosphorescent organic light emitting device

Enhanced Hole Injection in a Bilayer Vacuum-Deposited Organic Light-Emitting Device Using a P-Type Doped Silicon Anode

Surface treatment of indium tin oxide by oxygen-plasma for organic light-emitting diodes

Surface Modification of Indium Tin Oxide by Oxygen Plasma Immersion Ion Implantation

Hole-injection Mechanisms of Organic Light Emitting Diodes with Si Anodes

The Optimization of Hole Injection Layer in Organic Light-Emitting Diodes

Indium Tin Oxide Anode Self-Assembled Monolayer Modification for Device Performance Improvement of Organic Light-Emitting Diodes

Interfacial Electronic Structures in an Organic Light-Emitting Diode

Role of Hole Playing in Improving Performance of Organic Light-Emitting Devices with an Al2o3 Layer Inserted at the Cathode-Organic Interface

Superior Hole Injection Material PEGDT/TPF/PVDF with p-Doping Capability for Highly Efficient Solution-Processed Organic Light-Emitting Diode

Electron-irradiated N+-Si As Hole Injection Tunable Anode of Organic Light-Emitting Diode

Electron Blocking and Hole Injection: the Role of N,N′-Bis(naphthalen-1-y)-N,N′-bis(phenyl)benzidine in Organic Light-Emitting Devices

Highly efficient hole injection/transport layer-free OLEDs based on self-assembled monolayer modified ITO by solution-process

A step-wise bilayered hole-injection layer composed of vanadium oxide and PEDOT:PSS for simultaneously enhancing efficiency and stability of organic light-emitting diodes

Enhanced Hole Injection Characteristics of a Top Emission Organic Light-Emitting Diode with Pure Aluminum Anode

Performance improvement of organic light emitting diode by low energy ion beam treatment of the indium tin oxide surface