Abstract:Quaternary (AlxGa1-x)yIn1-yP alloys grown on GaAs substrates have recently gained considerable interest in photonics for improving visible light-emitting diodes, laser diodes, and photodetectors. With two degrees of freedom (x, y) and keeping growth on a lattice-matched GaAs substrate, the (AlxGa1-x)0.5In0.5P alloys are used for tuning structural, phonon, and optical characteristics in different energy regions from far-infrared (FIR) → near-infrared (NIR) → ultraviolet (UV). Despite the successful growth of (AlxGa1-x)0.5In0.5P/n+-GaAs epilayers, limited optical, phonon, and structural characteristics exist. Here, we report our results of carefully examined optical and vibrational properties on highly disordered alloys using temperature-dependent photoluminescence (TD-PL), Raman scattering spectroscopy (RSS), and Fourier-transform infrared reflectivity (FTIR). Macroscopic models were meticulously employed to analyze the TD-PL, RSS, and FTIR data of the (Al0.24Ga0.76)0.5In0.5P/n+-GaAs epilayers to comprehend the energy-dependent characteristics. The Raman scattering and FTIR results of phonons helped analyze the reflectivity spectra in the FIR region. Optical constants were carefully integrated in the transfer matrix method for evaluating the reflectivity R(E) and transmission T(E) spectra in the NIR → UV regions, validating the TD-PL measurements of bandgap energies (EgPL).

Indium Mole Fraction Effect on the Structural and Optical Properties of Quaternary Alingan Epilayers

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

Material Properties of Mocvd Grown Algan Layers Influenced by Indium-Incorporation

Growth Temperature Effect on the Optical and Material Properties of AlxInyGa1−x−yN Epilayers Grown by MOCVD

Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1-x)0.5In0.5P/n+-GaAs Epifilms

Crystalline Quality of InxAl1-xN with Different Indium Contents Around Lattice-Matched to GaN

Indium Compositional Homogeneity in In$_{0.17}$Al$_{0.83}$N Epilayers Grown by Metal Organic Chemical Vapor Deposition

Influence of V/III Flux Ratio on Electrical Properties of AlInGaN/Gan Heterostructures Grown by MOCVD

Investigation of Indium Surface Segregation in InxGa1-xN Films

Effects of indium surfactant on growth and characteristics of (112¯2) plane AlGaN-based multiple quantum wells

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation

Chemical Composition and Elastic Strain in AlInGaN Quaternary Films

Thermal Redistribution of Localized Excitons and Its Effect on the Luminescence Band in InGaN Ternary Alloys

Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content

Investigation of High Indium-Composition InGaN/GaN Heterostructures on ZnO Grown by Metallic Organic Chemical Vapor Deposition

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Strain in Alingan Thin Films Caused by Different Contents of Al and in Studied by Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Epitaxial growth of semi-polar (11–22) plane AlInGaN quaternary alloys on m-plane (10-10) sapphire substrates

Effect of Indium Droplets on Growth of InGaN Film by Molecular Beam Epitaxy