Abstract:Frank-type stacking faults in 4H–SiC epitaxial layers were investigated using room-temperature photoluminescence mapping and high-angle annular dark-field high-resolution scanning transmission electron microscopy. Remarkably, the intrinsic Frank-type stacking fault (5,2) and intrinsic multilayer Frank-type stacking fault (4,2), which have been reported to have elongated triangular shapes to date, were found to have broader triangular shape, which was typical shape of Shockley-type stacking faults. The shaping of stacking faults could be explained based on the directions of the partial dislocations bounding the stacking faults. Formation models for the intrinsic (5,2) and (4,2) stacking faults were proposed. In addition, we observed Frank-type stacking faults (3,2,2,3) and (3,3) and Shockley-type stacking faults (3,3,3,2,3,2) and (3,2,3,3,3,2), which were not reported before. All of these stacking faults were composed with the stacking numbers 2 and 3 in the Zhdanov notation and showed very close characteristic photoluminescence emission wavelengths of 427–428 nm. Formation models for the stacking faults of (3,2,2,3), (3,3), (3,3,3,2,3,2), and (3,2,3,3,3,2) were proposed, also. Based on the proposed formation models of (4,2) and (3,3) stacking faults, formation models for the Frank-type stacking faults (4,1) and (3,2) were discussed. Finally, we pointed out that the (4,1) Frank-type stacking fault should be the intrinsic not the extrinsic fault, and the (3,2) Frank-type stacking fault is the extrinsic fault.

Electrical Activities of Stacking Faults and Partial Dislocations in 4H-Sic Homoepitaxial Films

EBIC study on the electrical activity of stacking faults in silicon

Electrical Activity of Frank Partial Dislocations and the Influence of Metallic Impurities in Czochralski-Grown Silicon

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Shearing Mechanisms of Stacking Fault and Anti-Phase-boundary Forming Dislocation Pairs in the Γ′ Phase in Ni-based Single Crystal Superalloy

Stacking Faults in 4h–sic Epilayers and IGBTs

Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC

Morphology of single Shockley-type stacking faults generated by recombination enhanced dislocation glide in 4H–SiC

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Ebic Study of Fe Precipitation on Bulk Stacking Fault in Czochralski-Grown Silicon

Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Si

Observation of broad triangular Frank-type stacking faults and characterization of stacking faults with emission wavelengths below 430 nm in 4H–SiC epitaxial layers

Electrical/Optical Activities of Grain Boundaries in Multicrystalline Si

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy

Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC