Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

Analysis of the Rate of Change of Inversion Charge in Thin Insulator P-Type Metal-Oxide-Semiconductor Structures

Dynamics Of Surface Charge Region Of Thin Insulator N-Type Mos Structures

An Unified Model to Characterize the Strong Inversion High-Frequency Capacitance in Thin Oxide MOS Structures under Fowler-Nordheim Tunneling Injection Condition

Capacitance Characteristics of the Mos Structure with Fowler-Nordheim Tunneling Current

Modeling and Analysis for MOS Capacitance of TSV Considering Temperature Dependence

Dc electrical oxide thickness model for quantization of the inversion layer in MOSFETs

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

Icm - An Analytical Inversion Charge Model For Accurate Modeling Of Thin Gate Oxide Mosfets

A MOS Quantum Tunneling Analytical Model Based on Theory of Density Gradient

A Non-Quasi-Static Model for Tunneling FETs Based on the Relaxation Time Approximation

Characterization and Modelling of Carrier Distribution and Gate Capacitance in MOS Structure Inversion Layer

C-VCharacterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects

Analytical Drain Current Model for Long-Channel Gate-All-around Negative Capacitance Transistors with a Metal–ferroelectric–insulator–semiconductor Structure

Modeling of Gate Current and Capacitance in Nanoscale-MOS Structures

Capacitance-voltage characteristics of a metal-carbon-silicon structure

A new charge model including quantum mechanical effects in MOS structure inversion layer

New Strategy of Modeling Inversion Layer Characteristics in MOS Structure for ULSI Applications

Characterization of Non-Equilibrium Charge of MOS Capacitors on P-Type 4H SiC

Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects