Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

Dynamics Of Surface Charge Region Of Thin Insulator N-Type Mos Structures

Analysis of the Rate of Change of Inversion Charge in Thin Insulator P-Type Metal-Oxide-Semiconductor Structures

An Unified Model to Characterize the Strong Inversion High-Frequency Capacitance in Thin Oxide MOS Structures under Fowler-Nordheim Tunneling Injection Condition

Capacitance Characteristics of the Mos Structure with Fowler-Nordheim Tunneling Current

Surface potential versus voltage equation from accumulation to strong inversion region for undoped symmetric double-gate MOSFETs

Modeling of Gate Current and Capacitance in Nanoscale-MOS Structures

A New Charge Model Including Quantum Mechanical Effects in MOS Structure Inversion Layer

Direct Tunneling Current Model for MOS Devices with Ultra-Thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect

An explicit surface potential model of bulk-MOSFETs with inclusion of poly-gate accumulation, depletion, and inversion effects

A MOS Quantum Tunneling Analytical Model Based on Theory of Density Gradient

Dc electrical oxide thickness model for quantization of the inversion layer in MOSFETs

Barrier Height Change in Very Thin Sio2 Films Caused by Charge Injection

A charge sheet model for MOSFETs with an abrupt retrograde channel Part II. Charges and intrinsic capacitances

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

Analytic MOSFET surface potential model with inclusion of poly-gate accumulation, depletion, and inversion effects

Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs

A physics-based analytical surface potential and capacitance model of MOSFET's operation from accumulation to depletion region

A Charge-Based Intrinsic Capacitance Model For Thin-Film Soi Short-Channel Mosfet

Charge-Based Model for Symmetric Double-Gate Mosfets with Inclusion of Channel Doping Effect

A New Method To Investigate Quantum Mechanical Effects In Mos Structure Strong Inversion Layer