Abstract:Carbon-rich hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) using silane, ethylene and hydrogen as gas sources. The effect of relatively low hydrogen dilution on the properties of as-deposited samples was investigated. A variety of techniques including Scanning Electron Microscope (SEM), Fourier transform infrared spectroscopy (FTIR), Raman scattering (RS), UV-VIS spectrophotometer and photoluminescence (PL) spectroscopy were used to characterize the grown films. The deposition rate decreases with hydrogen dilution. The silicon to carbon ratio increases slightly with the addition of hydrogen. The phenomenon can be attributed to the dissipation of power density caused by hydrogen dilution. Raman G peak position shifting to a lower wave number indicates that hydrogen dilution reduces the size and concentration of sp(2) carbon clusters, which is caused by the etching effect by atomic hydrogen. The optical band gap, which is controlled by the sp(2) carbon clusters and Si/C ratio, changes unmonotonously. The as-deposited samples exhibited a blue-green room-temperature (RT) PL well visible to the naked eye with UV excitation. The PL band can be attributed to the radiative recombination of electron-hole pairs within small sp(2) clusters containing C=C and C-H units in a sp(3) amorphous matrix.

Study on the Optical Property of P-C Doped A-Si:H Thin Films

A Study of PECVD Amorphous SiO2 Films Using Infrared Absorption Techniques

Study of plasma-deposited amorphous SiO2 films using infrared absorption techniques

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

The influence of the growth conditions on the structural and optical properties of hydrogenated amorphous silicon carbide thin films

Structure and Properties of Hydrogenated Amorphous Silicon Carbide Thin Films Deposited by Pecvd

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

Structural and optical properties of α-Si1-xCx:H thin films prepared by RF-PECVD

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Raman Characterization of the Structural Evolution in Amorphous and Partially Nanocrystalline Hydrogenated Silicon Thin Films Prepared by PECVD

Highly luminescent hydrogenated amorphous carbon (a-C:H) thin films

Multiphase Structure of Hydrogenated Amorphous Silicon Carbide Thin Films

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Change of Material Properties in the Process from P-a-SiC:H to P-μc-Si:H

Influence of Phosphorus Doping in the Active Layer with Deposition Time and Gas Flow Rate in a-Si:H Thin Film Transistor

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Comparison on Mechanical Properties of Heavily Phosphorus- and Arsenic-Doped Czochralski Silicon Wafers

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Effect of gas temperature on the structural and optoelectronic properties of a-Si: H thin films deposited by PECVD

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films