Abstract:High-density semiconducting aligned carbon nanotube (A-CNT) arrays have been demonstrated with wafer-scale preparation of materials and have shown high performance in P-type field-effect transistors (FETs) and great potential for applications in future digital integrated circuits (ICs). However, high-performance N-type FETs (N-FETs) have not yet been implemented with A-CNTs, making development of complementary metal-oxide-semiconductor (CMOS) technology, a necessary component for modern digital ICs, impossible. In this work, we reveal the mechanism hindering the realization of A-CNT N-FETs contacted by low-work-function metals and develop corresponding solutions to promote the performance of N-FETs to that of P-type FETs (P-FETs). The fabricated scandium (Sc)-contacted A-CNT N-FET with a 100 nm gate length exhibits an on-state current (Ion) of 800 μA/μm and a peak transconductance (gm) of 250 μS/μm, representing the highest performance of CNT-based N-FETs to date. Moreover, CMOS technology has been developed to realize N- and P-FETs with symmetric high performance based on A-CNTs. The fabricated A-CNT CMOS FETs show electron and hole mobilities of 325 and 241 cm2 V-1 s-1, respectively, which are slightly higher than the corresponding values of Si CMOS transistors. Our scalable fabrication of A-CNT CMOS FETs with comparable electronic performance to Si CMOS will promote the application of CNT-based electronics in digital ICs.

Schottky Barrier Formation at a Carbon Nanotube–Scandium Junction

First-principles study of Schottky barrier formation of a semiconducting carbon nanotube-metal contact

Schottky Barrier Formation at Metal Electrodes and Semiconducting Carbon Nanotubes

Chemical Bonding And Schottky Barrier For Metal-Carbon Nanotube Contacts

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors: scaling and comparison with Sc-contacted devices.

Hf-Contacted High-Performance Air-Stable N-Type Carbon Nanotube Transistors

Reliability Tests and Improvements for Sc-Contacted N-Type Carbon Nanotube Transistors

High-performance N-Type Carbon Nanotube Field-Effect Transistors with Estimated Sub-10-ps Gate Delay

Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly.

Ab Initio Study Of Schottky Barriers At Metal-Nanotube Contacts

Selected-Area Fabrication of a Single-Walled Carbon Nanotube Schottky Junction with Tunable Gate Rectification

Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays

All-around Contact for Carbon Nanotube Field-Effect Transistors Made by Ac Dielectrophoresis

PN junction and band to band tunneling in carbon nanotube transistors at room temperature

Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors

Schottky Barrier and Contact Resistance of InSb Nanowire Field Effect Transistors

Unipolar P-Type Single-Walled Carbon Nanotube Field-Effect Transistors Using TTF–TCNQ As the Contact Material

Field-Effect Transistors Based on Single-Wall Carbon Nanotubes Bundles

Deep-Submicrometer Complementary Metal-Oxide-Semiconductor Transistors Based on Carbon Nanotube Films

Improvement of N-type carbon nanotube field effect transistor performance using the combination of yttrium diffusion layer in HfO2 dielectrics and metal contacts