Temperature dependence of the electrical resistivity in ZrB2 thin film prepared by DC magnetron sputtering
Guangke Tian,Xinyu Li,Zhansheng Dong,Tingting Shi,Yanyan Wang
DOI: https://doi.org/10.1016/j.matlet.2021.129733
IF: 3
2021-06-01
Materials Letters
Abstract:<p>ZrB<sub>2</sub> thin film is of significant interest for microelectronic applications owing to a combination of low resistivity and outstanding diffusion barrier properties. However, the influence of temperature on the electrical properties of ZrB<sub>2</sub> film has been less understood. In this work, amorphous and nanocrystalline ZrB<sub>2</sub> thin films are prepared by DC magnetron sputtering and the dependence of its resistivity on temperature from 77 K to 600 K are analyzed. The results show that both of the prepared ZrB<sub>2</sub> films exhibit a negative temperature coefficient of resistivity (TCR) character. In the temperature region of 77 K to 500 K, the TCR values of the nanocrystalline ZrB<sub>2</sub> film are in the range of -10 to -80 ppm.K<sup>-1</sup>, implying the film being suitable used as a low-temperature drift contact material.</p>
materials science, multidisciplinary,physics, applied