Abstract:Phase-pure epitaxial bismuth ferrite (BiFeO3, BFO) thin films with a homogeneous mixed-phase structure were synthesized on (001)-oriented lanthanum aluminate (LaAlO3, LAO) substrates using chemical solution deposition. The phase development of the BFO thin film and its leakage current characteristics have been systematically investigated as a function of thickness (number of spin-coated layers) and the heat treatment process (heating temperature and dwell time). The results show that the tetragonal-like (T′) phase fraction changes dramatically from 35% (45 nm thick single layer) to 10% (250 nm thick four-layer films). In a two-layer film (80 nm) configuration, the T′-phase fraction was further tuned. When annealing at 640 °C for 30 min, this mixed-phase BFO film, despite its high T′-phase fraction (28%), shows the lowest leakage current (<0.1 A/cm2 at <500 kV/cm), comparable to 200 nm pulsed laser deposition-grown pure R-BFO thin films. In contrast to the observed bulk-limited Ohmic or space-charge-limited-conduction (SCLC)-predominant mechanism in pure R′-phase and low T′-phase fraction BFO thin films, the high T′-phase fraction (∼28%) mixed-phase BFO film displays an interface-limited Schottky emission to an SCLC mechanism transition with increasing electric field.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00891?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00891</a>.Detailed deposition process for all bismuth ferrite thin films; representative AFM topography images; Raman spectra of multilayer BFO thin films; high-angle X-ray θ–2θ diffraction patterns; pole figures of representative BFO films; and PFM amplitude and phase images of thin films (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00891/suppl_file/el0c00891_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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