Influence of Thickness on the Electrical Properties of BaTiO3films Deposited on Ni Substrates by Radio-Frequency Magnetron Sputtering

Haigen Gao,Zhenxing Yue,Longtu Li

DOI: https://doi.org/10.1088/0022-3727/46/4/045307

2012-01-01

Journal of Physics D Applied Physics

Abstract:Radio-frequency magnetron sputtering was employed to grow BaTiO3 (BT) films on base metal Ni substrates. The dependence of electrical properties on thickness was investigated in the thickness range from 200 to 1160 nm from dielectric and alternating current (ac) impedance measurements. X-ray diffraction results show that a compressive stress is introduced due to the large difference in thermal expansion coefficients between BT and Ni, and it is reduced with increasing thickness. The capacitance density is reduced with increasing thickness, which is caused by a decrease in residual stress and grain size. Ac impedance spectra demonstrate that the electrical resistance of the BT film is attributed to electrode interfaces, grain boundaries and grains, and it is enhanced with increasing thickness. From impedance spectra analysis, the reduced oxygen vacancies in the vicinity of electrode interfaces and in each grain can be considered to be responsible for the enhanced resistance and reduced dielectric loss of the BT film with increasing thickness.