Abstract:The ferroelectric properties of hafnium oxide and zirconium oxide based thin films are promising for applications in low power electronics, such as ultra-thin ferroelectric tunneling devices. However, the amount of ferroelectric phase in the film depends on their polycrystalline morphology, which changes with film thickness. Therefore, controlling the film thickness without changing the ferroelectric properties has remained challenging. Here, we propose the use of thermal atomic layer etching to decouple the ferroelectric phase stabilization from the film thickness. First, the ferroelectric phase fraction is maximized by crystallizing the film at an optimized film thickness. Subsequently, the ferroelectric film thickness is reduced to the desired range by atomic layer etching. We demonstrate the feasibility of this approach for a ferroelectric hafnium zirconium oxide film of 10 nm initial thickness, which we integrate into a double-layer ferroelectric tunnel junction. The atomic layer etch rate of ferroelectric hafnium zirconium oxide using HF and dimethylaluminum chloride is found to be ∼0.2 Å/cycle. Although the ferroelectric phase persists after atomic layer etching, the etching increases the surface roughness. For applications in ferroelectric tunnel junctions, we show that atomic layer etching of ferroelectric hafnium zirconium oxide can improve the read current by more than a factor of 200, while at the same time reducing the read voltage by 43%. The resulting tunneling electroresistance of about 2500 is the highest reported so far for polycrystalline hafnium zirconium oxide-based materials.

High Field Characterization of Current-Voltage Dependences in Continuous/Semicontinuous High-k Ultrathin Films Through Leakage-Path Blocking

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Alternating Current Field Effects in Atomically Ferroelectric Ultrathin Films

Measurement of Nonlinear Current–Voltage Dependence of Interfacial Passive Layers for Ferroelectric Thin Films

Ultrahigh frequency properties of discontinuous CoFeB/SiO_2 multilayer films with high resistivity

Study of Ferroelectic Properties in Ferroelectric/High-K Dielectric Bilayers

Anomalous Hopping and Tunneling Effects in a New Aluminum Film Percolation System

In-situ quantitative measurement of electric fields in zinc oxide thin films using electrostatic force microscopy

Leakage Behavior and Distortion of the Hysteresis Loop in Ferroelectric Thin Films

Interfacial-Layer Modulation Of Domain Switching Current In Ferroelectric Thin Films

Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf 0.5 Zr 0.5 O 2 Film

Estimation of Nonlinear Interfacial Capacitance from Domain Switching Current of Ferroelectric Thin Films

Low Field-Induced Electron Emission Phenomenon Observed from the Carbon Containing Thin Films

Atomic layer etching of ferroelectric hafnium zirconium oxide thin films enables giant tunneling electroresistance

Fabrication and Characterization of Zr-rich Zr-aluminate Films for High-Κ Gate Dielectric Applications

Nanosecond-range Measurements of Imprint Effect for Pt∕IrO2∕Pb(Zr0.4Ti0.6)O3∕IrO2∕Pt Thin-Film Capacitors

Properties of high-k gate dielectric LaAlO3 thin films

Impact of Interfacial Layer on the Switching Characteristics of HZO-based Ferroelectric Tunnel Junction

Dielectric Degradation and Reversible Domain Motion in Ferroelectric Thin Films Evidenced by Double-Butterfly Capacitance–Voltage Loops with Sweeping Times from 500 Ns to 1 S

Current Transient Versus Time Investigation of Charged Defect Motion in Sandwich-Structured La-modified Bi2Ti4O11 Films for Large Charge Storage

In situ Transmission Electron Microscopy Studies of Electric-field-induced Phenomena in Ferroelectrics