Abstract:Ion-enhanced plasma etching has been widely used in Micro-Electro-Mechanical Systems (MEMS) and semiconductor manufacture. Especially, the pattern transfer in the production of micro-electronic devices requires high anisotropy etch to achieve deep and vertical trench profiles. Usually, a bias power will be applied on the substrate to form a sheath from which ions gain their kinetic energies, which is key for the ion assisted etching yield. In this work, we simulated a 2D profile evolution progress for chlorine etching of silicon. In addition to a DC bias investigation, we also consider a radio frequency (RF) biased sheath. In the method, first, a sheath model is used to get the ion energy distributions (IEDs) and ion angular distributions (IADs) of ions entering into the trench region after passing through the sheath. Then, ion motions in trench and flux distributions at the trench surface are calculated by tracing ion trajectories in the local electric field. Finally, considering the ion assisted etch yield of silicon in chlorine plasma, the cell removal algorithm is simulated to achieve evolution progress of the trench. Influences of different aspects such as the ion reflection, the bias voltage, the charging of the mask sidewalls, and the discharge pressure on the profile evolution are studied. Results show that ion reflections on sidewalls and local electric field in the trench cause the trenching, a large voltage can cause tapering, and the application of RF bias will reduce the trenching and achieve a larger etch rate. The gas pressure is also key in the trench formation. We can achieve more ideal trench topography by adjusting these discharge parameters.

Investigation of Focused Ion Beam Sputtering Etching and Enhanced Etching

Investigation on Etch Performance of Focused Ion Beam

Investigation of 3D microfabrication characteristics by focused ion beam technology in silicon

Investigation of surface damage precursor evolutions and laser-induced damage threshold improvement mechanism during Ion beam etching of fused silica.

Experimental Study of Three-Dimensional Microfabrication by Focused Ion Beam Technology

Investigation on femtosecond laser combined with dynamic wet etching machining of SiC/SiC

Dry Etching of HfO2 and SiO2 Optical Thin Films

A Review of Focused Ion Beam Sputtering

3-D SRIM Simulation of Focused Ion Beam Sputtering with an Application-Oriented Incident Beam Model

Influence of Dry Etching on the Properties of SiO2 and HfO2 Single Layers.

Investigation of Laser-Induced Damage Threshold Improvement Mechanism During Ion Beam Sputtering of Fused Silica

Characteristics of Several Common Optical Materials in Ion Beam Etching

High-throughput Microchannel Fabrication in Fused Silica by Temporally Shaped Femtosecond Laser Bessel-beam-assisted Chemical Etching.

Experimental Study on Evolution of Chemical Structure Defects and Secondary Contaminative Deposition during HF-Based Etching

Ion beam lithography with gold and silicon ions

Effect of ion beam etching on surface/subsurface structural defect evolution in fused silica optics

Experimental Study on Removal of Antireflection Sol-Gel SiO2 Coating of Fused Silica Assisted by Ion Beam Etching

Simulations of the parameters in the focused ion beam implanted different materials

Chemical Etching Mechanisms and Crater Morphologies Pre-Irradiated by Temporally Decreasing Pulse Trains of Femtosecond Laser

Study on Feature Profile Evolution for Chlorine Etching of Silicon in an RF Biased Sheath

Stable Nanodepth and Nanogram Level Material Removal in Electrochemically Induced Chemical Etching of Fused Quartz