Investigation on Etch Performance of Focused Ion Beam

谢进,江素华,王家楫,唐雷钧,宗祥福
DOI: https://doi.org/10.3969/j.issn.1674-4926.2001.02.009
2001-01-01
Abstract:Focused Ion Beam (FIB),an advanced technology combiningmicro-analysis with micro-processing,plays an important role in IC design and manufacture.The fundamental properties of FIB,such as the etch rates in different materials (for example in the substrate of silicon, aluminum or silicon oxide),have been studied by the detailed observation under the Scanning Electronic Microscope (SEM). The variations in etch rates and the crater topography with ion current have been investigated. The etch rates in different materials are influenced by their atomic binding energy, atomic weight, density and crystal structure, etc. With the growth of ion current, the etch rates in all materials do not increase linearly, while the crater topography becomes more and more irregular. The possible causes of these results are also discussed on the basis of sputtering mechanism.
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