Abstract:This paper attempts to present a brief review of recent progress obtained by the author's group in the research area of ion beam metallurgy, namely (i) formation of metal-nitride by nitrogen implantation; (ii) metallic glass formation by ion mixing; and (iii) icosahedral phase formation by ion mixing. Silver- and copper-trinitrides have been formed, for the first time, by RT 80 keV nitrogen ion implantation for doses up to 2×10 18 N cm −2 . These indicated that deposition of large amounts of energy during implantation could provide the reaction energy of noble-metal-nitride with rather positive heat of formation, and that local nitrogen concentration in the implanted films could be considerably greater than that limited by the sputtering yield involved. Besides, our observation of the reverse sequence of phase transition TiTiNTi 2 N with increasing nitrogen dose suggested that growth kinetics (or structural compatibility between newly formed phase and the matrix) might be a key factor in determining the nitride formation in some systems. Two parameters were found of importance in influencing the glass forming ability (GFA) of binary metal systems. One is MPAR (maximum possible amorphization range), which equals 100% minus the maximum solid solubilities observed in the equilibrium phase diagram. The other is the heat of formation. A map was constructed by these parameters and some empirical qualifications were found to classify the systems according to GFA into three categories of Hardly (HGF), Possible (PGF) and Readily (RGF) Glass Forming systems. The FeCu system is an immiscible one, in which amorphization induced by ion mixing could only occur within a narrow composition range. The favored composition was figured out experimentally, and an icosahedral phase was also formed by ion mixing without post-annealing at corresponding atomic stoichiometry. Interestingly, a similar phase was also formed in the FeMo system.

Formation of Nitride Cu3n by Mev N-Ion Implantation into Cu

Formation Of Noble-Metal Nitrides By Nitrogen Implantation

Formation of Metal Nitrides by Nitrogen Implantation

Carbon Nitride Films Synthesized By Nh3-Ion-Beam-Assisted Deposition

Experimental Studies of Superhard Materials Carbon Nitride Cnx Prepared by Ion-Beam Synthesis Method

Nitrogen Ion Implantation into the Amorphous CN Films Prepared with Ion Beam Assisted Deposition

Physical Characteristics of Low-Dose Nitrogen Ions-Implanted Copper Oxide Thin Film on n-Si (100) Substrate

Investigation of carbon nitride films by cathodic arc evaporation

Ion beam synthesis of C-N crystalline film and its analysis

Formation of Β-C3n4 Phase in C-N Films Deposited by Reactive Ionized Cluster Beam Method

Raman Spectroscopy on the Beta-C3n4 Structure Formed by Low-Energy Nitrogen Ion Implantation into A Diamond Surface

Synthesis of C3N4+ by the Combination of Laser Ablation of Graphite and N2 Molecular Beam

Study Of Alloy Phase Formation Using Ion-Beams

Correlation of 3d transition metal carbide phase formation with 3d electrons by carbon ion implantation

Structural, Optical, and Electrical Characteristics of Cu3N with Respect to Substrate Temperature and N2 Concentration in Mixed Sputtering Gas

Investigation of Mn-implanted n-Si by low-energy ion beam deposition

Optical and magnetic properties in well and barrier ZnS waveguides formed by MeV Ni and Cu ion implantation

Formation of Cubic C3N4 Thin Films by Plasma Enhanced Chemical Vapor Deposition

Formation of cBN nanocrystals by He+ implantations of hBN

Implantation of Cuion in Stainless Steel by MEVVA Ion Source and Molecular Dynamic Simulation

Synthesis and Thermal Decomposition of Carbon Nitride Films Prepared by Nitrogen Ion Implantation into Graphite