Raman Spectroscopy on the Beta-C3n4 Structure Formed by Low-Energy Nitrogen Ion Implantation into A Diamond Surface

PN Wang,Z Guo,XT Ying,JH Chen,XM Xu,FM Li
DOI: https://doi.org/10.1103/physrevb.59.13347
1999-01-01
Abstract:Raman spectroscopy was employed to study the structure of the carbon nitride formed by low-energy nitrogen ion implantation into a diamond film. A series of narrow Raman peaks were observed in the range of 150-1500 cm(-1). These peaks match well with the calculated Raman frequencies of beta-C3N4, revealing the formation of the beta-C3N4 phase. No Raman peaks were detected in this region when a graphite substrate was implanted under the same conditions, suggesting that the sp(3)-bonded carbon favors the formation of the sp(3)-bonded beta-C3N4. [S0163-1829(99)05619-2].
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