Structural, Optical, and Electrical Characteristics of Cu3N with Respect to Substrate Temperature and N2 Concentration in Mixed Sputtering Gas

Tran Le
DOI: https://doi.org/10.1007/s13369-023-08589-9
IF: 2.807
2024-01-03
Arabian Journal for Science and Engineering
Abstract:Cu 3 N films are investigated utilizing direct current magnetron sputtering from the Cu target in an Ar/N 2 mixed sputtering gas. X-ray diffractive analysis, Ultra-violet absorption spectroscopy, X-ray dispersive spectroscopy, atomic force microscopy, field-emission scanning electron microscopy, Hall measurements, and I–V characteristic measurements are used to investigate the properties of the films. The study findings initially obtained films with a Cu 3 N composition at the appropriate substrate temperature of 80 °C. When the N 2 :(Ar + N 2 ) gas ratio is more than 50%, the electrical property of films switches from n-type to p-type. The film obtains the greatest crystal quality and the best p-type electric property at the N 2 :(Ar + N 2 ) gas ratio of 70%, with resistivity, hole concentration, and hole mobility of 1.18 × 10 –2 Ωcm, 9.8 × 10 19 cm −3 , and 5.4 cm 2 V −1 s −1 , respectively. A p–n Cu 3 N homojunction cell has an efficiency of 0.21%.
multidisciplinary sciences
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