Abstract:Crystallization process and amorphous state stability of Si-Sb-Te films with different Si concentration (10, 20 at. %) and Sb/Te ratio (2:3 and 1:1) have been studied and compared with Ge2Sb2Te5 (GST) film by in situ film resistance measurements. The effects of Si concentration and Sb content on crystalline resistivity, crystallization temperature, activation energy of crystallization, and amorphous state stability of films have been studied. The activation energy Ea of crystallization of GST film was confirmed to be 2.34 eV, while the activation energy Ea of Si10Sb36Te54 film increased to 2.99 eV and further reached to 3.65 eV for Si20Sb32Te48 film when the Si content increased to 20 at. %. Si addition increased the crystallization temperature and crystalline resistivity of Si-Sb-Te films largely, and enhanced the amorphous state stability of the films, while Sb revealed contrary effects to Si. The microstructures of Si-Sb-Te films were analyzed through x-ray diffraction and high resolution transmission electron microscopy. Phase separation has been observed in annealed Si-Sb-Te films, and Si-Sb-Te films crystallized into rhombohedral Sb2Te3 phase surrounded by amorphous Si-rich grain boundaries with high resistance, which would be helpful to reduce the writing current of phase change memory.

Phase-Change Characteristics and Thermal Stability of GeTe/Sb<sub>2</sub>Te<sub>3</sub>Nanocomposite Multilayer Films

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

Investigation of Ge2Sb2Te5/Si Nano-Multilayered Films for Phase-Change Memory Applications

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Advantages of GeTeN material for phase change memory applications

Characteristics of Si-Sb-Te Films for Phase Change Memory

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Characteristics of TeGa$_{2}$Sb$_{14}$ Thin Films for Phase-Change Memory

Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge 3Sb 2Te 5 for phase-change memory application

Crystallization Kinetics of Ga–Sb–Te Films for Phase Change Memory

Homogeneous phase W–Ge–Te material with improved overall phase-change properties for future nonvolatile memory

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Ga2te3 Phase Change Material For Low-Power Phase Change Memory Application

Investigation of Phase Transition in Stacked Ge-Chalcogenide/SnTe Phase-change Memory Films

Temperature-dependent phase separation during annealing of Ge 2 Sb 2 Te 5 thin films in vacuum

Simultaneously low resistance drift and ultra‐fast phase change speed based on GeSb/Sb multi‐layer thin films

Investigation Of Phase Transitions In Stacked Gete/Snte And Ge2se3/Snte Chalcogenide Films

Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications

Characteristics of Ga–Sb–Te Films for Phase-Change Memory

Gete/Crsb2te Superlattice-Like Thin Film for Excellent Thermal Stability and High Phase Change Speed