Abstract:The self-doping effects induced by the 2D polarized material have presented a novel doped strategy, which can simplify the preparation of electronic and optoelectronic devices. Herein, the self-doping effects, band alignments, and carrier mobilities ( μ ) of the hydro-fluorination buckled GaN (H-GaN-F) and h-BN monolayer stacking hetero-structures have been systematically explored based on the density functional theory (DFT). Due to the asymmetry of the structure, the intrinsic polarization exhibits in the H-GaN-F monolayer (GaN-M) and is stronger in the H-GaN-F bilayer (GaN-B). For the GaN/h-BN hetero-structures, driven by the downward polarization of the H-GaN-F, the H-GaN-F exhibits p -doping characteristics owing to the hole injection, and the h-BN monolayer is n -doped owing to the electron injection. The doping type of the H-GaN-F and the h-BN monolayer can be controlled by the reversal of the polarization direction of the H-GaN-F. The band alignments of the h-BN/GaN hetero-structures are type-III, leading to the formation of self-doping p-n junctions in the h-BN/GaN hetero-structures. The high carrier concentration ( n ) of 9.60 × 10 13 e cm −2 is obtained due to the large charge transfer in the h-BN/GaN-B hetero-structure. The high μ of 10.50 × 10 3 cm 2 V −1 s −1 is obtained in the GaN-B/h-BN hetero-structure. Our work illustrates a novel approach to doping to 2D GaN-based (or polar) materials, providing a theoretical basis for streamlining and designing the production of the 2D electronic nanodevice device.

Polarization Induced Ultra-High Electron Concentration Up to 1020 Cm-3 in Graded AlGaN

Polarization Doping: Reservoir Effects of the Substrate in Algan Graded Layers

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Polarization Induced Hole Doping in Graded AlxGa1−xN (x = 0.7 ∼ 1) Layer Grown by Molecular Beam Epitaxy

Electron Mobility in Polarization-Doped Al0-0.2GaN with a Low Concentration Near 1017 Cm−3

Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy

Low-resistance Ohmic Contact on Polarization-Doped AlGaN/GaN Heterojunction

Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys

Polarization Induced High Al Composition AlGaN P–n Junction Grown on Silicon Substrates

Polarization Induced Pn-Junction Without Dopant in Graded Algan Coherently Strained on Gan

Polarization Induced Doping in Graded Algan Films

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Controlling a three dimensional electron slab of graded Al$_{x}$Ga$_{1-x}$N

Self-doping effects and carrier mobility of the H-GaN-F and h-BN stacking hetero-structures

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures

Thickness and Mg doping of graded AlGaN layers: Influence on contact layer's structural and electrical properties for DUV emitters

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Temperature-dependent Polarization Characteristics in Al0.25Ga0.75N/AlN/GaN Heterostructure