Polarization Induced Pn-Junction Without Dopant in Graded Algan Coherently Strained on Gan

Shibin Li,Morgan Ware,Jiang Wu,Paul Minor,Zhiming Wang,Zhiming Wu,Yadong Jiang,Gregory J. Salamo

DOI: https://doi.org/10.1063/1.4753993

IF: 4

2012-01-01

Applied Physics Letters

Abstract:We propose a type of pn-junction not formed by impurity-doping, but rather by grading the Al composition in an AlxGa1−xN thin film, resulting in alternating p and n conducting regions due to polarization charge. By linearly grading AlxGa1−xN from 0% to x (x ≤ 30%) and back to 0% Al, a polarization induced pn-junction is formed, even in the absence of any impurity doping. X-ray diffraction reciprocal space maps are used to determine the strain state of the different graded composition samples. Polarization induced doping also provides a solution to the problem of p-type doping efficiency for III-nitrides.