Abstract:Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of $V_{\text{bi}}\approx5.5$ V, a minimum room temperature ideality factor of $\eta\approx 1.63$, and more than 12 orders of current modulation at room temperature. Stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300$^\circ$C. The one-sided n$^{+}$-p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance-voltage profile. The measured average mobile hole density is $p \sim 5.7 \times 10^{17}$ cm$^{-3}$, in close agreement with what is theoretically expected from distributed polarization doping. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n$^{+}$ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization doping enables ultrawide bandgap semiconductor heterojunction p-n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments.

Polarization Induced Hole Doping in Graded AlxGa1−xN (x = 0.7 ∼ 1) Layer Grown by Molecular Beam Epitaxy

Polarization Induced Ultra-High Electron Concentration Up to 1020 Cm-3 in Graded AlGaN

Polarization Induced High Al Composition AlGaN P–n Junction Grown on Silicon Substrates

Polarization Doping: Reservoir Effects of the Substrate in Algan Graded Layers

Polarization Induced Pn-Junction Without Dopant in Graded Algan Coherently Strained on Gan

Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy

Polarization Induced Doping in Graded Algan Films

Controlling a three dimensional electron slab of graded Al$_{x}$Ga$_{1-x}$N

Electron Mobility in Polarization-Doped Al0-0.2GaN with a Low Concentration Near 1017 Cm−3

Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys

Polarization Doping - Ab Initio Verification of the Concept: Charge Conservation and Locality

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Polarization Effects Simulation of AlGaN/GaN Heterojunction by Using a Symbolistic Δ-Doping Layer

Low-resistance Ohmic Contact on Polarization-Doped AlGaN/GaN Heterojunction

Polarization-Induced Charges In Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling

Thickness and Mg doping of graded AlGaN layers: Influence on contact layer's structural and electrical properties for DUV emitters

Comparative analysis of structure and electronic properties of doped g-GaN/Al0.5Ga0.5N heterostructure

Substantial P‐Type Conductivity of AlN Achieved via Beryllium Doping

Polarization-balanced design of AlN/GaN heterostructures: Application to double-barrier structures

Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping