Abstract:This work investigates the Ohmic contact mechanism and low resistance Ohmic contact preparation for GaN-based high electron mobility transistors (HEMTs) with GaN/AlN superlattice (SL) barriers. The electrical and microstructural characterization of Ti/Al/Ni/Au contacts shows that the formation of Ohmic contacts primarily depends on the TiN islands formed by Ti diffusion in the barrier layer, which is the main reason for the high contact resistance of GaN/AlN SLs HEMTs under conventional high-temperature annealing. A grid deep-recess technique is proposed to establish direct contact between TiN interfacial layer, the barrier, and the two-dimensional electron gas through the sidewalls. This novel technique achieves an Ohmic contact with a low contact resistance of 0.31 Omega mm at low temperatures (700 degrees C). Furthermore, increased grid deep-recess density effectively reduces contact resistance due to the additional contribution from the conduction width. It is also noteworthy that after complete removal of the barrier layer, the impact of recess depth on contact characteristics is minimal, greatly reducing the process complexity of grid deep-recess technique. Consequently, GaN/AlN SLs HEMTs fabricated using the grid deep-recess technique exhibit significant improvements in on-resistance, transconductance and saturation current. These results are expected to expand the potential application of GaN/AlN SL barrier layers in radio frequency and power devices.

Low-resistance Ohmic Contact on Polarization-Doped AlGaN/GaN Heterojunction

Polarization Induced Ultra-High Electron Concentration Up to 1020 Cm-3 in Graded AlGaN

Ultra-Low Resistance Ohmic Contacts to Gan with High Si Doping Concentrations Grown by Molecular Beam Epitaxy

Low-Resistive Ohmic Contacts in High-Electron-Mobility AIN/GaN Heterostructures by Suppressing the Oxygen Incorporation

Polarization Doping: Reservoir Effects of the Substrate in Algan Graded Layers

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Low Ohmic Contact Resistivity Realized by in Situ SiNx Insertion for High Al-composition-AlGaN/GaN Heterostructure

Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity

Electron Mobility in Polarization-Doped Al0-0.2GaN with a Low Concentration Near 1017 Cm−3

Design and Fabrication of Ohmic Contact on AlGaN/GaN Heterostructure

Heterostructure and Interfacial Engineering for Low-Resistance Contacts to Ultra-Wide Bandgap AlGaN

Ohmic Contact to AlGaN/GaN HEMT with Electrodes in Contact with Heterostructure Interface

Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon

Ohmic Contact and Interfacial Reaction of Ti/Al/Pt/Au Metallic Multi-Layers on N-Alxga1−xn/gan Heterostructures

Fabrication and Formation Mechanisms of Ohmic Conducts with Low Annealing Temperature for GaN/AlN Superlattice Barrier HEMTs

Novel Structural Ti/Al-Based Ohmic Contacts on Algan/Gan Heterostructures

Polarization Induced Hole Doping in Graded AlxGa1−xN (x = 0.7 ∼ 1) Layer Grown by Molecular Beam Epitaxy

Polarization Induced Pn-Junction Without Dopant in Graded Algan Coherently Strained on Gan

Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys

Low Specific Contact Resistivity of 10−3ω·cm2 for Ti/Al/Ni/Au Multilayer Metals on SI-GaN:Fe Substrate

Controlling a three dimensional electron slab of graded Al$_{x}$Ga$_{1-x}$N