Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon

yang li,g i ng,subramaniam arulkumaran,chandra kumar,kian siong ang,m j anand,hong wang,r hofstetter,gang ye

DOI: https://doi.org/10.7567/APEX.6.116501

IF: 2.819

2013-01-01

Applied Physics Express

Abstract:Low-contact-resistance (R-c) non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts were realized on an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) grown on a silicon substrate. Optimization of the rapid thermal process reveals that R-c decreases drastically from the annealing temperature of 700 to 850 degrees C and slightly increases from 875 to 900 degrees C. The sample annealed at 850 degrees C exhibited the lowest R-c of 0.22 +/- 0.03 Omega.mm [specific contact resistivity, rho(c) = (0.78 +/- 0.22) x 10(-6) Omega.cm(2)] with a smooth surface morphology (RMS roughness similar to 5.5 nm). The low R-c is due to the formation of TixSiy and the intermixing of TixSiy with the bottom Ta layer at the metal/semiconductor interface. (C) 2013 The Japan Society of Applied Physics