Abstract:Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and remarkable material characteristics. However, achieving efficient p-type doping in high aluminum composition AlGaN remains a formidable challenge. This study presents an alternative approach to address this issue by fabricating a p+ Si/n-AlN/n+ AlGaN heterojunction structure by following the semiconductor grafting technique. Atomic force microscopy (AFM) analysis revealed that the AlN and the nanomembrane surface exhibited a smooth topography with a roughness of 1.96 nm and 0.545 nm, respectively. High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) confirmed a sharp and well-defined Si/AlN interface, with minimal defects and strong chemical bonding, crucial for efficient carrier transport. X-ray photoelectron spectroscopy (XPS) measurements demonstrated a type-I heterojunction with a valence band offset of 2.73 eV-2.84 eV and a conduction band offset of 2.22 eV -2.11 eV. The pn diode devices exhibited a linear current-voltage (I-V) characteristic, an ideality factor of 1.92, and a rectification ratio of 3.3E4, with a turn-on voltage of indicating effective p-n heterojunction. Temperature-dependent I-V measurements showed stable operation up to 90 C. The heterojunction's high-quality interface and electrical performance showcase its potential for advanced AlGaN-based optoelectronic and electronic devices.

Polarization Induced High Al Composition AlGaN P–n Junction Grown on Silicon Substrates

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Polarization Induced Hole Doping in Graded AlxGa1−xN (x = 0.7 ∼ 1) Layer Grown by Molecular Beam Epitaxy

Polarization Induced Pn-Junction Without Dopant in Graded Algan Coherently Strained on Gan

Polarization Induced Ultra-High Electron Concentration Up to 1020 Cm-3 in Graded AlGaN

Polarization Doping: Reservoir Effects of the Substrate in Algan Graded Layers

Polarization Induced Doping in Graded Algan Films

Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates

Si/AlN p-n heterojunction interfaced with ultrathin SiO 2

High-resistivity Nitrogen-Polar GaN for GaN/AlGaN High Electron Mobility Transistors by Metalorganic Chemical Vapor Deposition

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Normally-off AlN/β-Ga2O3 Field-Effect Transistors Using Polarization-Induced Doping

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy

Polarization Effects Simulation of AlGaN/GaN Heterojunction by Using a Symbolistic Δ-Doping Layer

Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys

Polarity control by inversion domain suppression in N-polar III-nitride heterostructures

Polarization-Induced Charges In Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling

Low-resistance Ohmic Contact on Polarization-Doped AlGaN/GaN Heterojunction

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping