A Very Low-Temperature Growth of Batio3 Thin Film by Hydrothermal Treatment Following Sol-Gel Coating at 200 Degree Celsius

ZQ Wei,M Noda,M Okuyama
DOI: https://doi.org/10.1080/10584580390254204
2003-01-01
Integrated Ferroelectrics
Abstract:BaTiO3 thin films with perovskite structure have been prepared on Pt/Ti/SiO2 /Si substrate using a combined process of conventional sol-gel process and a hydrothermal treatment at 200degreesC. The sol-gel films were spin-coated on Pt/Ti/SiO2 /Si. After drying, were treated in an autoclave with Ba(OH)(2) solution, and finally followed by post-baking at 200degreesC for 60 minutes. The crystallization temperature of the organic gel film can be much lowered by reaction with OH - solution in a high hydrothermal pressure. The structure development, stoichiometry, spectroscopic, and dielectric properties of BaTiO3 thin films have been systematically investigated. X-ray diffraction patterns show that well-developed crystallites with a pure perovskite phase have been formed. It was found from XPS analysis that the peak of carbon contained in the gel film was diminished by the hydrothermal treatment. From dielectric characterizations, the 500 nm BaTiO3 film showed dielectric constant of 20, and leakage current density of less than 1 x 10(-7) A/cm(2) at 50 kV/cm, respectively.
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