High-temperature Anisotropic Silicon-Etching Steered Synthesis of Horizontally Aligned Silicon-Based Zn(2)SiO(4) Nanowires.

Hongqiang Wang,Guanghai Li,Lichao Jia,Liang Li,Guozhong Wang

DOI: https://doi.org/10.1039/b906787f

IF: 4.9

2009-01-01

Chemical Communications

Abstract:A high-temperature anisotropic silicon-etching strategy is demonstrated to steer the growth of the horizontally localized parallel Zn(2)SiO(4) nanowires.

What problem does this paper attempt to address?

Ultrafast growth of single-crystalline Si nanowires

J.B. Chang,J.Z. Liu,P.X. Yan,L.F. Bai,Z.J. Yan,X.M. Yuan,Q. Yang

DOI: https://doi.org/10.1016/j.matlet.2005.12.085

IF: 3

2006-01-01

Materials Letters

Abstract:Silicon nanowires (SiNWs) have been catalytically synthesized by heat treatment of Si nanopowder at 980 °C. The SiNWs comprise crystalline Si nanoparticles interconnected with metal catalyst. The formation mechanism of nanowires generally depends on the presence of Fe catalysts in the synthesis process of solid–liquid–solid (SLS). Although gas phase of vapor–liquid–solid (VLS) method can be used to produce various of different nanowire materials, growth model based on the SLS mechanism by heat treatment is more ascendant for providing ultrafast growth of single-crystalline Si nanowires and controlling the diameter of them easily. The growth of single-crystalline SiNWs and morphology were discussed.
Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Huiquan Wang,Zhonghe Jin,Yangming Zheng,Huilian Ma,Tie Li,Yuelin Wang

DOI: https://doi.org/10.1088/0957-4484/19/17/175307

IF: 3.5

2008-01-01

Nanotechnology

Abstract:Boron is selectively implanted on the surface of an n-type silicon wafer to form a p-type area surrounded by an n-type area. The wafer is then put into a buffered oxide etch solution. It is found that the n-type area can be selectively etched without illumination, with an etching rate lower than 1 nm min(-1), while the p-type area can be selectively etched under illumination with a much higher etching rate. The possible mechanism of the etching phenomenon is discussed. A simple fabrication process of silicon nanowires is proposed according to the above phenomenon. In this process only traditional micro-electromechanical system technology is used. Dimensions of the fabricated nanowire can be controlled well. A 50 nm wide and 50 nm thick silicon nanowire has been formed using this method.
Low-temperature Growth and Raman Scattering Study of Vertically Aligned ZnO Nanowires on Si Substrate

Y Zhang,HB Jia,RM Wang,CP Chen,XH Luo,DP Yu,CJ Lee

DOI: https://doi.org/10.1063/1.1630849

IF: 4

2003-01-01

Applied Physics Letters

Abstract:High-density ZnO nanowires (ZnONWs) were aligned onto Au-catalyzed Si substrate through a simple low-temperature physical vapor deposition method. Scanning electron microscope (SEM) observations, x-ray diffraction (XRD) analysis, and photoluminescence spectra showed that the ZnONWs were single-crystalline, with a hexagonal wurzite structure. All of the results inferred from the SEM observations, the XRD rocking curves, and the Raman spectra for the investigated samples confirm that the ZnONWs are well aligned and c-axis oriented. The Raman spectra also indicated that the ZnONWs on Si substrates are under the biaxial compressive stress. Since it takes the advantage of low-cost, easily controlled deposition spot (due to the selective deposition trait of the Au layer), potential for scale-up production, and ability to integrate with Si substrate, this technique has a potential in future for fabricating the ZnONW array-based optoelectronic devices.
Catalyst Synthesis of Silicon-Based Zn2SiO4−SiOx Heterostructure Nanowires

H. Q. Wang,G. Z. Wang,L. C. Jia,C. J. Tang,G. H. Li

DOI: https://doi.org/10.1021/jp074783n

2007-01-01

Abstract:In this paper, a simple catalyst synthesis strategy for the preparation of Si-based heterostructure nanowires has been reported. The heterostructure nanowires with 800 nm in length and 20 nm in diameter are composed of Zn2SiO4 and SiOx nanowires in which the upper part is Zn2SiO4 nanowires and the lower part rooted to the Si substrate is SiOx nanowires. Zn droplets catalyze the growth of SiOx nanowires first, followed by each SiOx nanowire splitting to several sub-branches of SiOx nanowires, and Zn2SiO4 nanowires are formed at the end of the growth. It was found that the Si-based heterostructure nanowires form only at the relative low temperature. A dichromatic emission resulted respectively from SiOx and Zn2SiO4 further proves the heterostructure. A possible growth mechanism was proposed to better understand the formation of the silicon-based heterostructure.
Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Wenna Du,Xiaoguang Yang,Huayong Pan,Xianghai Ji,Haiming Ji,Shuai Luo,Xingwang Zhang,Zhanguo Wang,Tao Yang

DOI: https://doi.org/10.1021/acs.nanolett.5b03587

IF: 10.8

2016-01-01

Nano Letters

Abstract:We describe the controlled growth of planar InAsSb nanowires (NWs) on differently oriented Si substrates without any foreign catalysts. Interestingly, the planar InAsSb NWs grew along four criss-crossed (110) directions on an [100]-oriented substrate, two (100) directions plus four (111) directions on an [110]-oriented substrate, and six equivalent (112) directions on an [111]-oriented substrate, which correspond to the projections of (111) family crystal directions on the substrate planes. High-resolution transmission electron microscopy (HRTEM) reveals that the NWs, experienced a transition from out-of-plane to in-plane growth at the early growth stage but still occurred on the {111} plane, which has the lowest surface energy among all the surfaces. Furthermore, the NWs exhibit a pure zinc-blende crystal structure without any defects. A growth model is presented to explain growth of the NWs. In addition, conductive atomic force microscopy shows that electrically rectifying p-n junctions form naturally between the planar InAsSb NWs and the p-type Si substrates. The results presented here could open up a new route way to fabricate highly integrated III-V nanodevices.
Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

JJ Niu,J Sha,DR Yang

DOI: https://doi.org/10.1016/j.physe.2004.03.022

IF: 3.369

2004-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Silicon nano-wires (SiNWs) with diameter of ∼30nm and length of tens of micrometers on silicon wafers were synthesized by a novel thermal evaporation of zinc sulfide. After thermal evaporation at 1080°C for 1h, crystalline SiNWs were produced. It was found that the tip of SiNWs contained sulfur, while the other places of SiNWs did not. It is considered that the decomposition of SiS resulted in the formation of SiNWs. On the basis of the facts, a sulfide-assisted growth model of SiNWs was suggested.
Fabricating Vertically Aligned Sub-20 Nm Si Nanowire Arrays by Chemical Etching and Thermal Oxidation

Luping Li,Yin Fang,Cheng Xu,Yang Zhao,Nanzhi Zang,Peng Jiang,Kirk J. Ziegler

DOI: https://doi.org/10.1088/0957-4484/27/16/165303

IF: 3.5

2016-01-01

Nanotechnology

Abstract:Silicon nanowires (SiNWs) are appealing building blocks in various applications, including photovoltaics, photonics, and sensors. Fabricating SiNW arrays with diameters <100 nm remains challenging through conventional top-down approaches. In this work, chemical etching and thermal oxidation are combined to fabricate vertically aligned, sub-20 nm SiNW arrays. Defect-free SiNWs with diameters between 95 and 200 nm are first fabricated by nanosphere (NS) lithography and chemical etching. The key aspects for defect-free SiNW fabrication are identified as: (1) achieving a high etching selectivity during NS size reduction; (2) retaining the circular NS shape with smooth sidewalls; and (3) using a directional metal deposition technique. SiNWs with identical spacing but variable diameters are demonstrated by changing the reactive ion etching power. The diameter of the SiNWs is reduced by thermal oxidation, where self-limiting oxidation is encountered after oxidizing the SiNWs at 950 °C for 1 h. A second oxidation is performed to achieve vertically aligned, sub-20 nm SiNW arrays. Si/SiO2 core/shell NWs are obtained before removing the oxidized shell. HRTEM imaging shows that the SiNWs have excellent crystallinity.
Ordered Arrays Of Vertically Aligned [110] Silicon Nanowires By Suppressing The Crystallographically Preferred Etching Directions

Zhipeng Huang,Tomohiro Shimizu,Stephan Senz,Zhang Zhang,Xuanxiong Zhang,Woo Lee,Nadine Geyer,Ulrich Goesele

DOI: https://doi.org/10.1021/nl803558n

IF: 10.8

2009-01-01

Nano Letters

Abstract:The metal-assisted etching direction of Si(110) substrates was found to be dependent upon the morphology of the deposited metal catalyst. The etching direction of a Si(110) substrate was found to be one of the two crystallographically preferred < 100 > directions in the case of isolated metal particles or a small area metal mesh with nanoholes. In contrast, the etching proceeded in the vertical [(1) over bar(1) over bar0] direction, when the lateral size of the catalytic metal mesh was sufficiently large. Therefore, the direction of etching and the resulting nanostructures obtained by metal-assisted etching can be easily controlled by an: appropriate choice of the morphology of the deposited metal catalyst. On the basis of this finding, a generic method was developed for the fabrication of wafer-scale vertically aligned arrays of epitaxial [110] Si nanowires on a Si(110) substrate. The method utilized a thin metal film with an extended array of pores as an etching catalyst based on an ultrathin porous anodic alumina mask, while a prepatterning of the substrate prior to the metal depostion is not necessary. The diameter of Si nanowires can be easily controlled by-a combination of the pore diameter of the porous alumina film and varying the thickness of the deposited metal film.
Metal-catalyst-free epitaxial growth of aligned ZnO nanowires on silicon wafers at low temperature

Ye Zhang,Hongbo Jia,Dapeng Yu

DOI: https://doi.org/10.1088/0022-3727/37/3/018

2004-01-01

Abstract:Hexagonally well-faceted ZnO nanowire arrays were successfully aligned to Si wafers using a metal-catalyst-free physical vapour deposition method at 500degreesC. The ZnO nanowires prepared using the metal-catalyst-free approach are single-crystalline and of high-purity. The one-dimensional growth of these nanowires with an average diameter of 100 nm follows the c axis direction of wurtzite ZnO. The as-synthesized nanowire arrays on Si wafers could offer novel opportunities for both fundamental research and technological applications.
Synthesis of Vertically Aligned Ultra-Long ZnO Nanowires on Heterogeneous Substrates with Catalyst at the Root.

Guang Zhu,Yusheng Zhou,Sihong Wang,Rusen Yang,Yong Ding,Xue Wang,Yoshio Bando,Zhong Lin Wang

DOI: https://doi.org/10.1088/0957-4484/23/5/055604

IF: 3.5

2012-01-01

Nanotechnology

Abstract:The synthesis of ultra-long high-quality ZnO nanowires with uniform size and orientation on heterogeneous substrates is highly desirable, not only for investigating the fundamental properties of ZnO nanowires, but also for fabricating integrated functional nanodevices. Here we present a novel and general technique for growing vertically aligned ultra-long ZnO nanowires on various substrates. More importantly, the metal catalyst is experimentally determined not at the tip ends of the nanowires but at the junction area between the nanowires and the underlying substrate. Based on detailed analysis and control group results, we then propose a three-stage growth mechanism, in which vapor-liquid-solid growth and vapor-solid growth compete with each other to become dominant.
In-plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates.

Linwei Yu,Mingkun Xu,Jie Xu,Zhaoguo Xue,Zheng Fan,Gennaro Picardi,Franck Fortuna,Junzhuan Wang,Jun Xu,Yi Shi,Kunji Chen,Pere Roca i Cabarrocas

DOI: https://doi.org/10.1021/nl503001g

IF: 10.8

2014-01-01

Nano Letters

Abstract:Growing self-assembled silicon nanowires (SiNWs) into precise locations represents a critical capability to scale up SiNW-based functionalities. We here report a novel epitaxy growth phenomenon and strategy to fabricate orderly arrays of self-aligned in-plane SiNWs on Si(100) substrates following exactly the underlying crystallographic orientations. We observe also a rich set of distinctive growth dynamics/modes that lead to remarkably different morphologies of epitaxially grown SiNWs/or grains under variant growth balance conditions. High-resolution transmission electron microscopy cross-section analysis confirms a coherent epitaxy (or partial epitaxy) interface between the in-plane SiNWs and the Si(100) substrate, while conductive atomic force microscopy characterization reveals that electrically rectifying p-n junctions are formed between the p-type doped in-plane SiNWs and the n-type c-Si(100) substrate. This in-plane epitaxy growth could provide an effective means to define nanoscale junction and doping profiles, providing a basis for exploring novel nanoelectronics.
One-step Synthesis Route of the Aligned and Non-Aligned Single Crystalline Α-Si3n4 Nanowires

Mashkoor Ahmad,Jiong Zhao,Fan Zhang,CaoFeng Pan,Jing Zhu

DOI: https://doi.org/10.1007/s11431-009-0010-y

2009-01-01

Abstract:This paper reports the bulk synthesis route of the aligned and non-aligned high-quality α-Si3N4 nanowires (NWS) which were grown directly from the Si substrate by vapor phase deposition at 1050°. The as-grown products were characterized by employing XRD, SEM, HRTEM and photoluminescence. The microscopic results revealed that the products consist of single crystalline aligned and non-aligned α-Si3N4 NWs having a same diameter range of 30–100 nm and different lengths of about hundreds of microns. The XRD observation revealed that the products consist of α-phase Si3N4 NWs. The room temperature PL spectra indicated that the NWs have good emission property. The non-aligned NWs were formed at lower temperature as compared with aligned NWs. Our method is a simple and one-step procedure to synthesize the bulk-quantity and high-purity aligned and non-aligned α-Si3N4 NWs at a relatively low temperature. The possible growth mechanism was also briefly discussed.
Large-scale array of highly oriented silicon-rich micro/nanowires induced by gas flow steering

Zhou Jianfeng,Li Zhenglin,Chen Yanfeng,Wang Guanghou,Han Min

DOI: https://doi.org/10.1016/j.ssc.2004.10.027

IF: 1.934

2005-01-01

Solid State Communications

Abstract:Si-rich nanowires have been synthesized by decomposition of silicon monoxide (SiO) at a temperature of 1080°C, with argon (Ar) as the carrier gas. The morphology was observed to be highly oriented on a macro-scale by scanning electron microscopy (SEM). The formation mechanisms of the ordered morphology were discussed by means of energy dispersion X-ray spectroscopy (EDS), Raman scattering and high-resolution transmission electron microscopy (HRTEM) and we attributed this to the steering of the gas flow.
Nanoscale Silicon Wires Synthesized Using Simple Physical Evaporation

Dapeng Yu,Zhigang Bai,Yu Ding,Qingling Hang,Hongzhou Zhang,Jingjing Wang,Yinghua Zou,Wei Qian,GuangCheng Xiong,HeTian Zhou,Sunqi Feng

DOI: https://doi.org/10.1063/1.1825625

IF: 4

1998-01-01

Applied Physics Letters

Abstract:We report the large-scale synthesis of silicon nanowires (SiNWs) using a simple but effective approach, High purity SiNWs of uniform diameters around 15 nm were obtained by sublimating a hot-pressed silicon powder target at 1200 degrees C in a flowing carrier gas environment. The SiNWs emit stable blue light which seems unrelated to quantum confinement, but related to an amorphous overcoating layer of silicon oxide. Our approach can be used, in principle, as a general method for synthesis of other one-dimensional semiconducting, or conducting nanowires. (C) 1998 American Institute of Physics.
Controllable Growth of Laterally Aligned Zinc Oxide Nanorod Arrays on A Selected Surface of the Silicon Substrate by A Catalyst-Free Vapor Solid Process - A Technique for Growing Nanocircuits

Wenqiang Lu,Chengming Jiang,Daniel Caudle,Chaolong Tang,Qian Sun,Jingjun Xu,Jinhui Song

DOI: https://doi.org/10.1039/c3cp51558c

IF: 3.3

2013-01-01

Physical Chemistry Chemical Physics

Abstract:We report a simple and effective vapor deposition method for directly growing ultra-long, laterally aligned, zinc oxide (ZnO) nanorod arrays only on the side edges of a bare silicon (Si) substrate without using any catalysts and precursors. The growth on the top surface of the substrate is restrained by controlling the flow of source vapor in a tube furnace through the chemical vapor solid process. The optimized growth parameters have been thoroughly investigated and identified. Direct growth of laterally aligned ZnO nanowire arrays on the desired surface of the substrate is successfully achieved. A vapor solid mechanism with source vapor flow rate control has been proposed to explain the synthesis: ZnO nanodots first form on the bare Si substrate side edges due to the local large binding energy and high zinc (Zn) vapor concentration, and then nanorods epitaxially grow from the nanodots. In addition, the lateral, ultra-long ZnO nanorods grown on orthogonal silicon microelectrodes are achieved and could be expected to find important applications in a bottom-up way of fabricating the next generation nanoelectronics.
Controlled Fabrication of Silicon Nanowires Via Nanosphere Lithograph and Metal Assisted Chemical Etching

Bo Sun,Tielin Shi,Wenjun Sheng,Guanglan Liao

DOI: https://doi.org/10.1166/jnn.2013.7517

2013-01-01

Journal of Nanoscience and Nanotechnology

Abstract:We investigated the controlled fabrication of uniform vertical aligned silicon nanowires with desired length, diameter and location by combining nanosphere lithograph and metal assisted chemical etching techniques. The close-packed polystyrene nanospheres array was obtained by self-assemble technique, followed by reactive ion etching to acquire a non-close-packed monolayer template. Subsequently, the template was used to create a metal film with nanoholes array, which enable the controlled fabrication of ordered silicon nanowires via metal assisted chemical etching technique. By adjusting the monolayer of polystyrene nanospheres and the conditions for the metal assisted chemical etching, we obtained uniform distributed silicon nanowires with desired morphology. The aspect ratio of the silicon nanowires can reach to about 86:1. Furthermore, we have obtained the double-layer silicon nanowires by slight modifying the process. The influences of various conditions during etching were also discussed for improving the controlled fabrication.
Heteroepitaxial Writing of Silicon-on-Sapphire Nanowires.

Mingkun Xu,Zhaoguo Xue,Jimmy Wang,Yaolong Zhao,Yao Duan,Guangyao Zhu,Linwei Yu,Jun Xu,Junzhuan Wang,Yi Shi,Kunji Chen,Pere Roca i Cabarrocas

DOI: https://doi.org/10.1021/acs.nanolett.6b02004

IF: 10.8

2016-01-01

Nano Letters

Abstract:The heteroepitaxial growth of crystal silicon thin films on sapphire, usually referred to as SoS, has been a key technology for high-speed mixed-signal integrated circuits and processors. Here, we report a novel nanoscale SoS heteroepitaxial growth that resembles the in-plane writing of self-aligned silicon nanowires (SiNWs) on R-plane sapphire. During a low-temperature growth at <350 °C, compared to that required for conventional SoS fabrication at >900 °C, the bottom heterointerface cultivates crystalline Si pyramid seeds within the catalyst droplet, while the vertical SiNW/catalyst interface subsequently threads the seeds into continuous nanowires, producing self-oriented in-plane SiNWs that follow a set of crystallographic directions of the sapphire substrate. Despite the low-temperature fabrication process, the field effect transistors built on the SoS-SiNWs demonstrate a high on/off ratio of >5 × 104 and a peak hole mobility of >50 cm2/V·s. These results indicate the novel potential of deploying in-plane SoS nanowire channels in places that require high-performance nanoelectronics and optoelectronics with a drastically reduced thermal budget and a simplified manufacturing procedure.
Ag-Assisted Lateral Etching of Si Nanowires and Its Application to Nanowire Transfer

Chuanbo Li,Kristel Fobelets,Chang Liu,Chunlai Xue,Buwen Cheng,Qiming Wang

DOI: https://doi.org/10.1063/1.4826930

IF: 4

2013-01-01

Applied Physics Letters

Abstract:Ag-assisted anisotropic lateral etching along the ⟨100⟩ directions in Si nanowire arrays (Si NWAs) is investigated. It is found that Ag ions, generated by H2O2 oxidation of Ag particles, re-nucleate on the sidewalls of the nanowires, causing side etching and tapering of the wires. By enhancing the side etching effect, fractures can be formed at specific positions along the nanowires. This technique is applied to transfer large-area Si NWAs onto a glass substrate.
Synthesis and photoluminescence of aligned straight silica nanowires on Si substrate

Qing Wei,Guowen Meng,Xiaohong An,Yufeng Hao,Lide Zhang

DOI: https://doi.org/10.1016/j.ssc.2006.03.022

IF: 1.934

2006-01-01

Solid State Communications

Abstract:Aligned straight silica nanowires (NWs) have been synthesized on Si wafer by thermal evaporation of mixed powders of zinc carbonate hydroxide and graphite at 1100°C and condensation on Si substrate without using any catalyst. The straight silica NWs have diameters ranging from 50 to 100nm, and lengths of several micrometers, with cone-shaped tips at their ends. High deposition temperature and relatively high SiOx vapor concentration near the growth substrate would be beneficial to the formation of the aligned straight silica NWs. Different morphologies of silica nanostructures have also been obtained by varying the deposition temperature and the vapor concentration of the SiOx molecules. Room temperature photoluminescence measurements on the oriented silica NWs show that two green emission bands at 510 and 560nm, respectively, revealing that the aligned straight silica NWs might have potential applications in the future optoelectronic devices.
A New Route to Large‐Scale Synthesis of Silicon Nanowires in Ultrahigh Vacuum

Xiangdong Xu,Yinchuan Wang,Zhongfan Liu,Ruguang Zhao

DOI: https://doi.org/10.1002/adfm.200600658

IF: 19

2007-01-01

Advanced Functional Materials

Abstract:An approach for the large‐scale synthesis of high‐purity silicon nanowires (SiNWs) in ultrahigh vacuum is presented. A mixture of Si and SiO2 is evaporated by an electron beam, and the growth temperature is 700 °C, which is much lower than those used for other oxide‐assisted growths. A new type of single‐crystal SiNWs, with [221] orientation, is thus synthesized. Moreover, it is experimentally demonstrated that SiO intermediates are formed in the process, and the nanowires are obtained via a disproportionation reaction of 2SiO → Si + SiO2. A growth mechanism is proposed and the critical factors for the formation of 1D nanowires are also determined. The approach is particularly compatible with the mature Si‐based technology, and is favorable for device integration and practical applications.

High-temperature Anisotropic Silicon-Etching Steered Synthesis of Horizontally Aligned Silicon-Based Zn(2)SiO(4) Nanowires.

Ultrafast growth of single-crystalline Si nanowires

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Low-temperature Growth and Raman Scattering Study of Vertically Aligned ZnO Nanowires on Si Substrate

Catalyst Synthesis of Silicon-Based Zn2SiO4−SiOx Heterostructure Nanowires

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

Fabricating Vertically Aligned Sub-20 Nm Si Nanowire Arrays by Chemical Etching and Thermal Oxidation

Ordered Arrays Of Vertically Aligned [110] Silicon Nanowires By Suppressing The Crystallographically Preferred Etching Directions

Metal-catalyst-free epitaxial growth of aligned ZnO nanowires on silicon wafers at low temperature

Synthesis of Vertically Aligned Ultra-Long ZnO Nanowires on Heterogeneous Substrates with Catalyst at the Root.

In-plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates.

One-step Synthesis Route of the Aligned and Non-Aligned Single Crystalline Α-Si3n4 Nanowires

Large-scale array of highly oriented silicon-rich micro/nanowires induced by gas flow steering

Nanoscale Silicon Wires Synthesized Using Simple Physical Evaporation

Controllable Growth of Laterally Aligned Zinc Oxide Nanorod Arrays on A Selected Surface of the Silicon Substrate by A Catalyst-Free Vapor Solid Process - A Technique for Growing Nanocircuits

Controlled Fabrication of Silicon Nanowires Via Nanosphere Lithograph and Metal Assisted Chemical Etching

Heteroepitaxial Writing of Silicon-on-Sapphire Nanowires.

Ag-Assisted Lateral Etching of Si Nanowires and Its Application to Nanowire Transfer

Synthesis and photoluminescence of aligned straight silica nanowires on Si substrate

A New Route to Large‐Scale Synthesis of Silicon Nanowires in Ultrahigh Vacuum