Abstract:Recently, metallic nanoparticles decorated semiconductor nanowires, especially silicon, attract considerable attention, due to their potential applications in photocatalysis, photovoltaics, surface enhanced Raman scattering and biosensing. A common method that has been used to decorate silicon nanowires with metallic nanoparticles, e.g. Au or Pt, is galvanic displacement, in which metallic ions are reduced with electrons supplied by virtue of silicon half-cell reaction. Here we report a method to decorate silicon nanowires with Ag nanoparticles by surface reduction, in which a freshly etched silicon surface reduces Ag ions in-situ in aqueous silver nitrate solution. The as-grown Ag nanoparticles exhibit either highly single crystallinity or twinning boundaries, with most probably diameter similar to 25 nm (Figure 1). Raman mapping experiments suggest that 1(st) order Raman band of silicon nanowires exhibit uniform contrast along wire axis for pristine silicon nanowires, while for Ag nanoparticle decorated silicon nanowires a series of "hot-spot", i.e., substantially enhanced Raman scattering were discovered along the wire axis. This was explained by local electric field enhancement due to Ag nanoparticle "nano-antenna", which was supported by the correlation between atomic force microscopy (AFM) analysis and Raman mapping (Figure 2). The enhancement is more or less delocalized in Raman mapping due to diffraction limit in our far-field mapping experiments. In addition, we also noticed a new side band feature similar to 495 cm(-1) for nanowires appeared after HF etching, this new feature sustained after sequential Oxygen plasma and UV/ozone treatment which excluded the possibility due to any possible surface dangling bonds. We now suspect this feature is due to porosity resulted from HF etching and it is now being subjected to further investigations.

Ag-Assisted Lateral Etching of Si Nanowires and Its Application to Nanowire Transfer

Metallization of Silicon Nanowires and Sers Response from A Single Metallized Nanowire

Silver Nanowires Eelectrodeposited from Reverse Hexagonal Liquid Crystals

Automatic release of silicon nanowire arrays with a high integrity for flexible electronic devices

Strategies for the AFM based manipulation of silver nanowires on a flat surface.

OS1503 Development of Highly Ordered Silicon Nanowire Array

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Roles of Ag in Fabricating Si Nanowires by the Electroless Chemical Etching Technique

Preparation of Silicon Nanowires by Metal-assisted Chemical Etching with Ethylene Glycol Additive

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Silver catalysis in the fabrication of silicon nanowire arrays

Stirring-assisted Assembly of Nanowires at Liquid-Solid Interfaces.

Fabrication and Properties of Large-Area Silicon Nanowire Arrays

Enhanced Raman Scattering of Silicon Nanowires by Ag Nanoparticles in‐situ Decoration

Fabrication of Single‐Crystalline Silicon Nanowires by Scratching a Silicon Surface with Catalytic Metal Particles

Design Optimization and Antireflection of Silicon Nanowire Arrays Fabricated by Au-assisted Chemical Etching

Fluorinion transfer in silver-assisted chemical etching for silicon nanowires arrays

Controllable Growth of Silicon Nanowire Arrays Fabricated by Two-Step Silver Catalyzed Chemical Etching

Dispersion, Refinement, and Manipulation of Single Silicon Nanowires

Fabrication and characterization of polycrystalline silicon nanowires with silver-assistance by electroless deposition

Ultra-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity