Abstract:In this paper, a simple catalyst synthesis strategy for the preparation of Si-based heterostructure nanowires has been reported. The heterostructure nanowires with 800 nm in length and 20 nm in diameter are composed of Zn2SiO4 and SiOx nanowires in which the upper part is Zn2SiO4 nanowires and the lower part rooted to the Si substrate is SiOx nanowires. Zn droplets catalyze the growth of SiOx nanowires first, followed by each SiOx nanowire splitting to several sub-branches of SiOx nanowires, and Zn2SiO4 nanowires are formed at the end of the growth. It was found that the Si-based heterostructure nanowires form only at the relative low temperature. A dichromatic emission resulted respectively from SiOx and Zn2SiO4 further proves the heterostructure. A possible growth mechanism was proposed to better understand the formation of the silicon-based heterostructure.

Catalyst Synthesis of Silicon-Based Zn2SiO4−SiOx Heterostructure Nanowires