Gain and Threshold Improvements of 1300 nm Lasers based on InGaAs/InAlGaAs Superlattice Active Regions
Andrey Babichev,Evgeniy Pirogov,Maksim Sobolev,Sergey Blokhin,Yuri Shernyakov,Mikhail Maximov,Andrey Lutetskiy,Nikita Pikhtin,Leonid Karachinsky,Innokenty Novikov,Anton Egorov,Si-Cong Tian,Dieter Bimberg
2024-08-05
Abstract:A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer compositions were grown. Using a superlattice allows to downshift the energy position of the miniband, as compared to thin InGaAs quantum wells, having the same composition, being beneficial for high-temperature operation. Very low internal loss (~6$cm^{-1}$), low transparency current density of ~500$ A/cm^2$, together with 46$ cm^{-1}$ modal gain and 53 % internal efficiency were observed for broad-area lasers with an active region based on a highly strained $In_{0.74}Ga_{0.26}As/In_{0.53}Al_{0.25}Ga_{0.22}As$ superlattice. Characteristic temperatures $T_0$ and $T_1$ were improved up to 76 K and 100 K, respectively. These data suggest that such superlattices have also the potential to much improve VCSEL properties at this wavelength.
Mesoscale and Nanoscale Physics