Gain and Threshold Improvements of 1300 nm Lasers based on InGaAs/InAlGaAs Superlattice Active Regions

Andrey Babichev,Evgeniy Pirogov,Maksim Sobolev,Sergey Blokhin,Yuri Shernyakov,Mikhail Maximov,Andrey Lutetskiy,Nikita Pikhtin,Leonid Karachinsky,Innokenty Novikov,Anton Egorov,Si-Cong Tian,Dieter Bimberg

2024-08-05

Abstract:A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer compositions were grown. Using a superlattice allows to downshift the energy position of the miniband, as compared to thin InGaAs quantum wells, having the same composition, being beneficial for high-temperature operation. Very low internal loss (~6$cm^{-1}$), low transparency current density of ~500$ A/cm^2$, together with 46$ cm^{-1}$ modal gain and 53 % internal efficiency were observed for broad-area lasers with an active region based on a highly strained $In_{0.74}Ga_{0.26}As/In_{0.53}Al_{0.25}Ga_{0.22}As$ superlattice. Characteristic temperatures $T_0$ and $T_1$ were improved up to 76 K and 100 K, respectively. These data suggest that such superlattices have also the potential to much improve VCSEL properties at this wavelength.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to improve the performance of 1300 - nm lasers, especially to enhance the gain and threshold characteristics, by optimizing the design of the InGaAs/InAlGaAs superlattice active region. Specifically, the researchers hope to achieve the following goals by adjusting the strain and quantum well width in the superlattice structure:

1. **Reduce internal loss**: Optimize the superlattice structure to reduce the energy loss inside the laser.
2. **Improve temperature stability**: Adjust the energy band structure in the superlattice so that the laser can still maintain good performance at high temperatures.
3. **Reduce transparent current density**: Optimize the material design to reduce the current density required to reach the laser threshold.
4. **Increase modal gain**: Improve the superlattice structure to increase the modal gain of the laser, thereby enhancing the output power.

These improvements are crucial for the applications of 1300 - nm vertical - cavity surface - emitting lasers (VCSELs), especially in fields such as short - wave infrared (SWIR) sensing, high - speed data communication, and 3D sensing. The paper experimentally analyzes three different types of superlattice active regions and their effects on laser performance, aiming to provide theoretical basis and technical support for the future design of VCSELs.

### Summary of Key Formulas
- **External quantum efficiency**:
\[
\eta_{\text{ext}}=\frac{2\eta_s}{h\nu}
\]
where \(h\nu\) is the photon energy and \(\eta_s\) is the slope efficiency determined from the front - reflecting surface.

- **Internal quantum efficiency and internal loss**:
\[
\frac{1}{\eta_{\text{ext}}}=\left(\frac{\alpha_i}{\alpha_m}+ 1\right)/\eta_i
\]
where \(\alpha_i\) is the internal loss, \(\alpha_m\) is the mirror loss, and \(\eta_i\) is the internal quantum efficiency.

- **Relationship between material gain and current density**:
\[
g = G_0\cdot\ln\left(\eta_i\cdot\frac{j}{j_{\text{tr}}}\right)
\]
where \(j_{\text{tr}}\) is the transparent current density and \(G_0\) is the gain coefficient.

- **Threshold current density**:
\[
j_{\text{th}}=\frac{j_{\text{tr}}}{\eta_i}\cdot\exp\left(\frac{\alpha_i+\alpha_m}{\Gamma\cdot G_0}\right)
\]
where \(\Gamma\) is the optical confinement factor.

Through these formulas and experimental results, the researchers demonstrate the potential of the superlattice structure in improving the performance of 1300 - nm lasers and propose directions for further optimization.