Abstract:This paper reviews results from research conducted at the University of Oklahoma on the development of new IV-VI semiconductor (lead salt) epitaxial growth and laser fabrication procedures that can ultimately lead to dramatic increases in mid-IR laser operating temperatures. Work has focused on growth of IV-VI semiconductor laser structures on silicon substrates using buffer layers that contain BaF2. Recent experiments show that it is possible to obtain high crystalline quality IV-VI semiconductor layer structures on (111)-oriented silicon substrates using molecular beam epitaxy (MBE) or on (100)-oriented silicon using a combination of MBE and liquid phase epitaxy (LPE). Experimental data for IV-VI semiconductor layer structures grown on silicon substrates including crystalline quality information as determined by high resolution X-ray diffraction (HRXRD) measurements and absorption edge information as determined by Fourier transform infrared (FTIR) transmission measurements are presented. Results show that these materials can be used to fabricate lasers that cover the 3 microns (3333 cm-1) to 16 microns (625 cm-1) spectral range. Removal of IV-VI semiconductor laser structures from the silicon growth substrate by dissolving BaF2 buffer layers with water is also demonstrated. This allows epitaxially-grown laser structures to be sandwiched between two heat sinks with a minimum of thermally resistive IV-VI semiconductor material. Theoretical modeling predicts that IV-VI lasers fabricated this way will have maximum continuous wave (cw) operating temperatures at least 60 degrees higher than those of IV-VI lasers fabricated on PbSe or PbTe substrates.

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Optimization of 1300 Nm Quantum Well Laser on GaAs Substrates

5.0 $μ$m emitting Interband Cascade Lasers with Superlattice and Bulk AlGaAsSb Claddings

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

Improvement of mid-wave infrared quantum cascade laser epitaxy by studying the effect of thermal annealing on GaInAs/AlInAs superlattice

GaAs/AlGaAs quantum cascade lasers

Performance characteristics of low threshold current 1.25-μm type-II GaInAs/GaAsSb W-lasers for optical communications

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Single-mode Near-infrared Lasing in a GaAsSb/GaAs Nanowire Superlattice at Room Temperature

Optimizations of Defect Filter Layers for 1.3-Μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates

High-power and low-threshold 1200 nm InGaAs/GaAs quantum-wells VECSEL grown by MOCVD

High Performance 1.3μm InAs/GaAs Quantum Dot Lasers with Low Threshold Current and Negative Characteristic Temperature

Optimum Growth Parameters of InAs/AlSb Superlattices for Interband Cascade Lasers

The Influence of the Waveguide Layer Composition on the Emission Parameters of 1550 nm InGaAs/InP Laser Heterostructures

1.3Μm AlInGaAs Strained Single Quantum Well Laser Diodes with High Characteristic Temperature of 200K

Reliability enhancement of InGaAs/AlGaAs quantum-well lasers on on-axis Si (001) substrate

Theory and design of In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 $μ$m on InP substrates

Spontaneous Emission and Gain Characteristics of Ingaas/Ingaasp Quantum Well Laser

An InGaAs Vertical-Cavity Surface-Emitting Laser Emitting at 1130 nm for Silicon Photonics Application