Abstract:We describe how a midwave infrared photonic integrated circuit (PIC) that combines lasers, detectors, passive waveguides, and other optical elements may be constructed on the native GaSb substrate of an interband cascade laser (ICL) structure. The active and passive building blocks may be used, for example, to fabricate an on-chip chemical detection system with a passive sensing waveguide that evanescently couples to an ambient sample gas. A variety of highly compact architectures are described, some of which incorporate both the sensing waveguide and detector into a laser cavity defined by two high-reflectivity cleaved facets. We also describe an edge-emitting laser configuration that optimizes stability by minimizing parasitic feedback from external optical elements, and which can potentially operate with lower drive power than any mid-IR laser now available. While ICL-based PICs processed on GaSb serve to illustrate the various configurations, many of the proposed concepts apply equally to quantum-cascade-laser (QCL)-based PICs processed on InP, and PICs that integrate III-V lasers and detectors on silicon. With mature processing, it should become possible to mass-produce hundreds of individual PICs on the same chip which, when singulated, will realize chemical sensing by an extremely compact and inexpensive package.

GaSb-based interband cascade laser with hybrid superlattice plasmon-enhanced claddings

GaSb-based Interband Cascade Laser with hybrid superlattice plasmon-enhanced claddings

Comparison between InAs-based and GaSb-based Interband cascade lasers with hybrid superlattice plasmon-enhanced claddings

5.0 $μ$m emitting Interband Cascade Lasers with Superlattice and Bulk AlGaAsSb Claddings

GaSb-Based Interband Cascade Lasers With Hybrid Claddings Operating at High Temperatures

Single-mode Interband Cascade Laser Based on V-coupled Cavity with 210 Nm Wavelength Tuning Range Near 3 Μm.

Low threshold InAs-based interband cascade lasers grown by MBE

Single-Mode Tunable Interband Cascade Laser Emitting at 3.4 Μm with a Wide Tuning Range over 100 Nm

Mid-infrared Tunable Interband Cascade Laser Employing Double-Trench Waveguide Structure with a Tuning Range of 118 Nm

High Single-Mode Selectivity V-cavity Tunable Semiconductor Laser Based on GaAs

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

Phosphides‐based terahertz quantum‐cascade laser

Mid-infrared Widely Tunable Single-Mode Interband Cascade Lasers Based on V-coupled Cavities.

InGaAsP/InP Dual Wavelength Bipolar Cascade Lasers with 100 Nm Wavelength Spacing

Phosphides-based terahertz quantum-cascade laser

Monolithic Chalcogenide Glass Waveguide Integrated Interband Cascaded Laser

Gain and Threshold Improvements of 1300 nm Lasers based on InGaAs/InAlGaAs Superlattice Active Regions

Single-mode, surface-emitting quantum cascade laser at 26 μ m

Interband cascade lasers grown simultaneously on GaSb, GaAs and Si substrates

GaAs/AlGaAs quantum cascade lasers

Interband Cascade Photonic Integrated Circuits on Native III-V Chip