Abstract:Gallium is incorporated into the strain-balanced In(Ga)As/InAsSb superlattice system to achieve the same mid-wave infrared cutoff tunability as conventional Ga-free InAs/InAsSb type-II superlattices, but with an additional degree of design freedom to enable optimization of absorption and transport properties. Time-resolved photoluminescence measurements of InGaAs/InAsSb superlattice characterization- and doped device structures are reported from 77 to 300 K and compared to InAs/InAsSb. The low-injection photoluminescence decay yields the minority carrier lifetime, which is analyzed with a recombination rate model, enabling the determination of the temperature-dependent Shockley–Read–Hall, radiative, and Auger recombination lifetimes and extraction of defect energy levels and capture cross section defect concentration products. The Shockley–Read–Hall-limited lifetime of undoped InGaAs/InAsSb is marginally reduced from 2.3 to 1.4 μs due to the inclusion of Ga; however, given that Ga improves the vertical hole mobility by a factor of >10×, a diffusion-limited InGaAs/InAsSb superlattice nBn could expect a lower bound of 2.5× improvement in diffusion length with significant impact on photodetector quantum efficiency and radiation hardness. At temperatures below 120 K, the doped device structures are Shockley–Read–Hall limited at 0.5 μs, which shows promise for detector applications.

Comparison between InAs-based and GaSb-based Interband cascade lasers with hybrid superlattice plasmon-enhanced claddings

GaSb-based interband cascade laser with hybrid superlattice plasmon-enhanced claddings

5.0 $μ$m emitting Interband Cascade Lasers with Superlattice and Bulk AlGaAsSb Claddings

Low threshold InAs-based interband cascade lasers grown by MBE

GaSb-Based Interband Cascade Lasers With Hybrid Claddings Operating at High Temperatures

Single-mode Interband Cascade Laser Based on V-coupled Cavity with 210 Nm Wavelength Tuning Range Near 3 Μm.

Single-Mode Tunable Interband Cascade Laser Emitting at 3.4 Μm with a Wide Tuning Range over 100 Nm

Single Mode Operation of Short-Cavity Quantum Cascade Lasers

Interband Cascade Photonic Integrated Circuits on Native III-V Chip

InGaAsP/InP Dual Wavelength Bipolar Cascade Lasers with 100 Nm Wavelength Spacing

Gain and Threshold Improvements of 1300 nm Lasers based on InGaAs/InAlGaAs Superlattice Active Regions

Optical Characterization of the Interband Cascade LWIR Detectors with Type-II InAs/InAsSb Superlattice Absorber

Mid-infrared Tunable Interband Cascade Laser Employing Double-Trench Waveguide Structure with a Tuning Range of 118 Nm

Material and device characterization of Type-II InAS/GaSb superlattice infrared detectors

Charge Transport in Interband Cascade Lasers: An Ab-Initio Self-Consistent Model

High Single-Mode Selectivity V-cavity Tunable Semiconductor Laser Based on GaAs

Interband cascade lasers grown simultaneously on GaSb, GaAs and Si substrates

Temperature and Injection Current Dependent Wavelength Tunability of Narrow-Ridge GaSb-Based Interband Cascade Lasers

Phosphides‐based terahertz quantum‐cascade laser

Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices