Abstract:This paper reviews results from research conducted at the University of Oklahoma on the development of new IV-VI semiconductor (lead salt) epitaxial growth and laser fabrication procedures that can ultimately lead to dramatic increases in mid-IR laser operating temperatures. Work has focused on growth of IV-VI semiconductor laser structures on silicon substrates using buffer layers that contain BaF2. Recent experiments show that it is possible to obtain high crystalline quality IV-VI semiconductor layer structures on (111)-oriented silicon substrates using molecular beam epitaxy (MBE) or on (100)-oriented silicon using a combination of MBE and liquid phase epitaxy (LPE). Experimental data for IV-VI semiconductor layer structures grown on silicon substrates including crystalline quality information as determined by high resolution X-ray diffraction (HRXRD) measurements and absorption edge information as determined by Fourier transform infrared (FTIR) transmission measurements are presented. Results show that these materials can be used to fabricate lasers that cover the 3 microns (3333 cm-1) to 16 microns (625 cm-1) spectral range. Removal of IV-VI semiconductor laser structures from the silicon growth substrate by dissolving BaF2 buffer layers with water is also demonstrated. This allows epitaxially-grown laser structures to be sandwiched between two heat sinks with a minimum of thermally resistive IV-VI semiconductor material. Theoretical modeling predicts that IV-VI lasers fabricated this way will have maximum continuous wave (cw) operating temperatures at least 60 degrees higher than those of IV-VI lasers fabricated on PbSe or PbTe substrates.

Low threshold InAs-based interband cascade lasers grown by MBE

Low Threshold, High Temperature Operation of Continuous Wave Interband Cascade Lasers Near 5 Μm

Single-mode Interband Cascade Laser Based on V-coupled Cavity with 210 Nm Wavelength Tuning Range Near 3 Μm.

GaSb-based interband cascade laser with hybrid superlattice plasmon-enhanced claddings

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

5.0 $μ$m emitting Interband Cascade Lasers with Superlattice and Bulk AlGaAsSb Claddings

Single-Mode Tunable Interband Cascade Laser Emitting at 3.4 Μm with a Wide Tuning Range over 100 Nm

Comparison between InAs-based and GaSb-based Interband cascade lasers with hybrid superlattice plasmon-enhanced claddings

Single Mode Operation of Short-Cavity Quantum Cascade Lasers

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

GaSb-Based Interband Cascade Lasers With Hybrid Claddings Operating at High Temperatures

Mid-infrared Tunable Interband Cascade Laser Employing Double-Trench Waveguide Structure with a Tuning Range of 118 Nm

Improvement of mid-wave infrared quantum cascade laser epitaxy by studying the effect of thermal annealing on GaInAs/AlInAs superlattice

Mid-infrared Widely Tunable Single-Mode Interband Cascade Lasers Based on V-coupled Cavities.

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Monolithic Chalcogenide Glass Waveguide Integrated Interband Cascaded Laser

1.55 Μm InAsP/InGaAsP Strained Multiple-Quantum-Well Laser Diodes Grown by Solid-Source Molecular Beam Epitaxy

Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

Low-Threshold 1.3- $\mu$ M GaInNAs Quantum-Well Lasers Using Quaternary-Barrier Structures

Room Temperature Continuous-Wave Operation of Inas/Inp (100) Quantum Dot Lasers Grown by Gas-Source Molecular-Beam Epitaxy