Phosphides-based terahertz quantum-cascade laser

D. V. Ushakov,A. A. Afonenko,R. A. Khabibullin,M. A. Fadeev,A. A. Dubinov

2023-10-16

Abstract:Due to their high optical phonon energies GaInP/AlGaInP heterostructures are a promising active medium to solve the problem of creating compact semiconductor sources with an operating frequency range of 5.5-7 THz. In this work, the temperature dependences of gain and absorption at 6.8 THz have been calculated for a GaInP/AlGaInP-based quantum-cascade laser (QCL) with two quantum wells in the cascade and a metal-metal waveguide. We propose a laser structure that provides a mode gain of over 90 cm-1 with a maximum operating temperature of 104 K. The results of this study open the way to the development of a QCL for operation in a significant part of the GaAs phonon absorption band region, which is inaccessible for existing QCLs.

Optics,Applied Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to develop a compact semiconductor quantum - cascade laser (QCL) that can operate in the 5.5 - 7 THz frequency range. This frequency range is very important for spectroscopic applications of organic and non - organic materials, liquids and gases, but currently there are no available QCLs.

### Specific problems and solutions:

1. **Limitations of existing QCLs**:
- Current QCLs are not available in the 5.5 - 10.5 THz frequency range.
- The main obstacle is the strong phonon absorption in traditional materials (such as GaAs/AlGaAs, InGaAs/InAlAs), which limits the application of these materials in this frequency range.

2. **Proposed new material system**:
- The paper proposes a heterostructure based on group - III metal phosphides (GaInP/AlGaInP) as an alternative material. These materials have a relatively high optical phonon energy (10 - 12 THz), which is higher than that of the traditional GaAs/AlGaAs heterostructure (about 8 THz).
- GaInP and AlGaInP have well - established growth techniques and can be grown with high quality using molecular beam epitaxy and vapor deposition methods.

3. **Design and optimization**:
- The researchers designed a double - quantum - well (QW) structure based on GaInP/AlGaInP and optimized the layer thickness to obtain the highest gain (more than 90 cm⁻¹).
- This design uses a metal - metal waveguide and can achieve efficient laser emission at 6.8 THz, and the maximum operating temperature can reach 104 K.

### Key formulas:
- **Drude model of dielectric function**:
\[
\epsilon(\nu)=\epsilon_{\infty}-\frac{\nu_p^2}{\nu^2 + i\nu\gamma}
\]
where \(\nu_p\) is the plasma frequency and \(\gamma\) is the damping parameter.

- **Semiconductor composite dielectric function**:
\[
\epsilon(\nu)=\epsilon_{\infty}-\sum_j\frac{S_j}{\nu^2-\nu_{LO,j}^2 + i\nu\gamma_{LO,j}}-\sum_j\frac{S_j}{\nu^2-\nu_{TO,j}^2 + i\nu\gamma_{TO,j}}+\frac{Nq^2}{m_e(\nu^2+\gamma_{ps}^2)}
\]
where \(\nu_{LO,j}\) and \(\nu_{TO,j}\) are the longitudinal optical phonon and transverse optical phonon frequencies respectively, \(\gamma_{LO,j}\) and \(\gamma_{TO,j}\) are the corresponding damping parameters, and \(\gamma_{ps}\) is the damping parameter of free carriers.

### Conclusion:
This research shows the potential of GaInP/AlGaInP - based QCLs with high gain and high operating temperature at 6.8 THz, providing a new approach for developing compact THz sources suitable for the 5.5 - 7 THz frequency range.