1310 nm V-cavity semiconductor laser with 38×100GHz tuning range

Yayan Chu,Jian-Jun He
DOI: https://doi.org/10.1109/ICOCN.2017.8121412
2017-01-01
Abstract:A 1310 nm InGaAlAs/InP V-cavity laser (VCL) is proposed and experimentally demonstrated. The laser is ultra-compact with a device size of only 520μm×300μm. Measurement result shows that 38×100GHz tuning range with above 30dB side-mode suppression ratio (SMSR) is achieved.
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