1650-nm-band Tunable V-Cavity Semiconductor Laser

Haoyu Deng,Yuan Zhuang,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2015.asu3b.4

2015-01-01

Abstract:We present a 1650-nm-band wavelength tunable V-cavity semiconductor laser for applications in methane detection. The laser does not require grating or epitaxial regrowth. A tuning range of over 16nm is achieved, with side mode suppression ratio (SMSR) above 30dB.

What problem does this paper attempt to address?

Simple and Compact V-cavity Semiconductor Laser with 50×100 GHz Wavelength Tuning.

Sen Zhang,Jianjun Meng,Shanli Guo,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1364/oe.21.013564

IF: 3.8

2013-01-01

Optics Express

Abstract:We report simple and compact V-cavity semiconductor laser capable of full-band wavelength tuning. A half-wave coupler is used to obtain high side-mode suppression ratio (SMSR) without any grating or epitaxial regrowth. Temperature induced gain spectrum shift is employed in combination with the Vernier tuning mechanism to extend the wavelength tuning range beyond the free spectral range limit. Wavelength tuning of 50 channels at 100GHz spacing with SMSR up to 38 dB has been demonstrated. We show that with a temperature variation of 35°C, the tuning range can be extended by about 15 nm, in contrast to 0.1 nm/°C for thermo-optic tuning range in grating based lasers. At a fixed temperature, consecutive wavelength tuning of 31 channels was achieved. The response time of the channel switching under the current-tuning regime is measured to be about 20μs. The large tuning range that can cover the full C-band will enable such a simple, compact and potentially low-cost tunable laser to be used in wavelength-agile access and data center networks.
40Nm Quasi-Continuous Wavelength Tuning of V-cavity Semiconductor Laser

Tize Li,Jianjun Meng,Jian-Jun He

DOI: https://doi.org/10.1088/1742-6596/844/1/012013

2017-01-01

Abstract:Full band quasi-continuous wavelength tuning with similar to 36dB side mode suppression ratio of V-cavity semiconductor laser is reported. A simple and general tuning algorithm employing only two electrodes to control the frequency combs shifting synchronously is presented and demonstrated, respectively.
GaAs/AlGaAs-Based 870-Nm-band Widely Tunable Edge-Emitting V-Cavity Laser

Wenxiong Wei,Haoyu Deng,Jian-Jun He

DOI: https://doi.org/10.1109/jphot.2013.2281616

IF: 2.4

2013-01-01

IEEE Photonics Journal

Abstract:An 870-nm-band wavelength tunable edge-emitting semiconductor laser based on V-coupled cavities in a GaAs/AlGaAs material system is presented. It does not involve any grating or epitaxial regrowth. Using a single electrode control, 31-channel wavelength tuning with a channel spacing of about 0.38 nm is achieved, with a tuning range of 11.4 nm. By additionally varying the temperature from 8 degrees C to 50 degrees C, wavelength tuning of 60 channels over 22.4 nm is demonstrated. At lower tuning current and with a temperature variation of 18 degrees C, wavelength switching by carrier plasma effect is achieved with a tuning range of 8.2 nm. The simple and compact 870-nm-band edge-emitting tunable laser is suitable for multifunctional photonic integration for optical interconnect and biomedical applications.
Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Jia Xu Brian Sia,Xiang Li,Wanjun Wang,Zhongliang Qiao,Xin Guo,Jin Zhou,Callum G. Littlejohns,Chongyang Liu,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1364/oe.400666

IF: 3.8

2020-01-01

Optics Express

Abstract:The wavelength region about of 1650 nm enables pervasive applications. Some instances include methane spectroscopy, free-space/fiber communications, LIDAR, gas sensing (i.e. C2H2, C2H4, C3H8), surgery and medical diagnostics. In this work, through the hybrid integration between an III-V optical amplifier and an extended, low-loss wavelength tunable silicon Vernier cavity, we report for the first time, a III-V/silicon hybrid wavelength-tunable laser covering the application-rich wavelength region of 1647-1690 nm. Room-temperature continuous wave operation is achieved with an output power of up to 31.1 mW, corresponding to a maximum side-mode suppression ratio of 46.01 dB. The laser is ultra-coherent, with an estimated linewidth of 0.7 kHz, characterized by integrating a 35 km-long recirculating fiber loop into the delayed self-heterodyne interferometer setup. The laser linewidth is amongst the lowest in hybrid/heterogeneous III-V/silicon lasers.
Tunable V-Cavity Semiconductor Laser And Modules

Jian-Jun He,Xiaohai Xiong,Jianjun Meng,Sen Zhang,Xiaolu Liao,Hongli Zhu,Lin Wu,Li Zou,Lei Wang,Guoping Li

2014-01-01

Abstract:We present the principle, design, packaging and measurement results of widely tunable V-cavity lasers. By using a novel half-wave coupler, single-mode lasing with high side mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning with Vernier effect is realized. The full-band tuning of 50 channels with 100 GHz spacing is demonstrated by further employing temperature induced gain spectrum shift. The laser is packaged into a small-form-factor 9-pin TOSA, and the electronic driver has been developed for the wavelength tuning and direct modulation. The advantages of compactness, fabrication simplicity, and easy wavelength control offer great potential for the tunable laser to be used in low-cost access and data center networks, as well as in portable devices for spectroscopic analysis.
Tunable V-Cavity Laser Monolithically Integrated with Traveling Wave Mach-Zehnder Modulator

Qi Chen,Zhongwen Wang,Jiasheng Zhao,Jianjun Meng,Guocai Song,Jian-Jun He

DOI: https://doi.org/10.1109/lpt.2022.3198520

IF: 2.6

2022-01-01

IEEE Photonics Technology Letters

Abstract:We present the monolithic integrated widely tunable V-cavity laser and traveling wave Mach-Zehnder modulator operating in the C-band. A wide wavelength tuning of 64 channels from 1513 nm to 1565 nm is obtained with SMSRs mostly over 40 dB. The $\text{V}_{\pi }$ is 5.5 V and the static extinction ratio is 14 dB. The 3-dB electro-optic bandwidth is measured to be 14.2 GHz. By optimizing the device structure and thickness of intrinsic region on a semi-insulating substrate wafer, a theoretical bandwidth over 40 GHz can be achieved.
1310 nm V-cavity semiconductor laser with 38×100GHz tuning range

Yayan Chu,Jian-Jun He

DOI: https://doi.org/10.1109/ICOCN.2017.8121412

2017-01-01

Abstract:A 1310 nm InGaAlAs/InP V-cavity laser (VCL) is proposed and experimentally demonstrated. The laser is ultra-compact with a device size of only 520μm×300μm. Measurement result shows that 38×100GHz tuning range with above 30dB side-mode suppression ratio (SMSR) is achieved.
1310 Nm V-Cavity Semiconductor Laser With 38x100ghz Tuning Range

Yayan Chu,Jian-Jun He

DOI: https://doi.org/10.1109/icocn.2017.8121412

2017-01-01

Abstract:A 1310 nm InGaAlAs/InP V-cavity laser (VCL) is proposed and experimentally demonstrated. The laser is ultra-compact with a device size of only 520 mu mx300 mu m. Measurement result shows that 38x100GHz tuning range with above 30dB side-mode suppression ratio (SMSR) is achieved.
Full-Band Tunable V-Cavity Laser for Low-Cost Access and Data Center Networks

Jian-Jun He,Wenxiong Wei,Sen Zhang,Jianjun Meng,Shanli Guo,Hongli Zhu,Li Zou

DOI: https://doi.org/10.1109/icait.2013.6621534

2013-01-01

Abstract:The principle, design and experimental results of widely tunable V-cavity lasers are reviewed. By using a novel half-wave coupler, single-mode lasing with high side-mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning is realized by employing the Vernier mechanism. The tuning range can be further extended beyond the free spectral range limit by using the effect of temperature induced gain spectrum shift. The full-band tuning of 50 channels with 100 GHz spacing is demonstrated at 1550 nm range. Similarly, 41-channel tuning with 150 GHz spacing is achieved at 870 nm. The advantages of compactness, fabrication simplicity, and easy wavelength control offer great potential for the tunable laser to be used in low-cost access and data center networks.
Quasi-Continuous Wavelength Tuning of Single-mode Interband Cascade Lasers Based on V-coupled Cavity

Jingli Gong,Hanting Yang,Rui Q. Yang,Jian-Jun He

DOI: https://doi.org/10.1117/12.2575270

2020-01-01

Abstract:Mid-infrared semiconductor lasers have a wide range of applications in gas sensing, environmental monitoring, medical diagnosis and other fields. The V-coupled cavity laser (VCCL) approach has been successfully applied in the communication band to achieve single-mode operation with a wide tuning range because of its advantages of no grating, compact structure and simple wavelength control. In this paper, the concept of V-coupled cavity is introduced to the interband cascaded lasers, and a monolithically integrated mid-infrared widely tunable single-mode laser is developed. In addition, we experimentally demonstrated a simple and general algorithm for wavelength tuning controlled by two electrodes synchronously, and realized quasi-continuous tuning of single-mode wavelength in mid-infrared interband cascade laser based on the V-coupled cavity configuration for the first time. In the tuning process, the injection current of the short cavity remains unchanged, and the stepped increase of the long cavity current is equivalent to the realization of discrete tuning with the channel spacing of 1.1 nm determined by the short cavity. With the increase of the injection current of the coupler electrode while fixing the long cavity current, the thermo-optic effect caused by the coupler current will cause the refractive index of the two FP cavities to change together, thus realizing the fine tuning of the laser wavelength. A total tuning range of 53.2 nm has been achieved, from 2.8244 mu m to 2.8776 mu m, with the temperature adjusted from 110K to 120K.
Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches

Xiaolu Liao,Jianjun Meng,Jian-Jun He

DOI: https://doi.org/10.1117/12.2073603

2014-01-01

Abstract:We present a 1560-nm-band digitally wavelength tunable V-coupled-cavity semiconductor laser monolithically integrated with two waveguides based monitoring photodiodes (MPD) through deeply etched reflective trenches. The reflective trenches are designed to be 1.16 mu m wide, about three quarters of the wavelength, and are deeply etched through the waveguide with a depth larger than 4 mu m. Due to the high reflectivity of the etched trenches, a low threshold current of 19mA is achieved. Using a single electrode control, wavelength tuning of 22 channels at 100GHz spacing with SMSR above 35 dB is obtained. The relationship between the photocurrents of the two MPD at the two waveguide branches and the laser output power from the coupler side is investigated as a function of the wavelength. Since the integrated tunable laser with MPDs is very compact and does not involve any grating or epitaxial regrowth, it is suitable for low-cost multifunctional photonic applications for access and data center networks.
Widely Tunable Electro-Absorption Modulated V-Cavity Laser

Sen Zhang,Yimin Xia,Jianjun Meng,Jiasheng Zhao,Jian-Jun He

DOI: https://doi.org/10.1109/jphot.2019.2950608

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:We report a widely tunable V-cavity laser monolithically integrated with an electro-absorption modulator (EAM). The device shows a 41-nm wavelength tunability covering 51 channels at 100 GHz spacing on the ITU grid, with a side-mode suppression ratio (SMSR) higher than 47 dB. Error-free transmission over 50 km standard single-mode fiber at 10 Gb/s is demonstrated at all wavelengths over the tuning range. The integrated EAM exhibits a dynamic extinction ratio higher than 12.5 dB. The bit-error-rate measurements show a power penalty less than 3 dB for 50-km transmission. The results demonstrate that this ultra-compact and regrowth-free electro-absorption modulated tunable laser can be a cost-effective transmitter solution for DWDM metropolitan and access networks.
Multiple Gas Detection Using V-cavity Coupled Diode Laser

Hanting Yang,Jian-Jun He

DOI: https://doi.org/10.1117/12.2537595

2019-01-01

Abstract:A multiple gas detection system based on a V-cavity coupled diode laser around 1550nm has been developed. The V-cavity coupled diode laser exhibits side mode suppression ratio (SMSR) over 40dB and digitally switching over 20nm. The absorption lines of CO, CO2 and H2S are separately around 1567.3nm, 1573nm, 1578nm, which are distributed over the tuning range of the diode laser. The technique of tunable diode laser absorption spectrum (TDLAS) is adopted in the gas detection for the advantage of high sensitivity and resolution. What's more, the systems based on direct absorption spectroscopy (DAS) and wavelength modulation spectroscopy (WMS) are established to measure gas concentration. As a result, a linear relationship between detection signal and gas concentration is worked out and the R-square coefficient of the linear fitting is better than 0.99 for CO and CO2.
High Single-Mode Selectivity V-cavity Tunable Semiconductor Laser Based on GaAs

Tuo Chen,Mingyu Li,Yuxia Song,Kai Chang,Yonggang Zou,Jian-Jun He

DOI: https://doi.org/10.1016/j.rinp.2023.107209

IF: 4.565

2024-01-01

Results in Physics

Abstract:With the progress of integrated optoelectronic devices over recent decades, the semiconductor research has increasingly focused on tunable semiconductor lasers featuring a compact structure and simplified fabrication. In this manuscript, we present a proposal for a V-Cavity tunable semiconductor Laser (VCL) at a center wavelength of 940 nm. The theoretical analysis encompasses the threshold conditions of the laser, considering various cavity length differences within the waveguide layer structure. Moreover, we showcase a VCL with a waveguide width of 3 μm and a channel interval of 0.6 nm. Through the optimization of polynomial parameters associated with the curved waveguide, the VCL attains a transmittance exceeding 99.4 %. Additionally, we address the determination of optimal parameter ranges and solve the optical field distribution within the half-wave coupler. The simulation results exhibit that the half-wave coupler, employing optimized parameters, achieves remarkable single-mode selectivity when operating at a central wavelength of 940 nm. Notably, a maximum side mode suppression ratio (SMSR) of 47.9 dB is attainable with a half-wave coupler length of 45 μm and a waveguide gap of 1.7 μm.
Single-Mode Tunable Interband Cascade Laser Emitting at 3.4 Μm with a Wide Tuning Range over 100 Nm

Jingli Gong,Rui Q. Q. Yang,Zhanyi Wang,Jian-Jun He

DOI: https://doi.org/10.1109/lpt.2023.3241118

IF: 2.6

2023-01-01

IEEE Photonics Technology Letters

Abstract:We report a widely tunable monolithically integrated V-coupled cavity interband cascade laser (ICL) emitting near $3.4~\mu \text{m}$ . The mode selection is achieved using a half-wave V-coupler designed for the ICL in the mid-infrared range without any grating. The side-mode suppression ratio is demonstrated up to 35.7 dB. In the heat-sink temperature range from 130 K to 140 K, single-mode wavelength tuning range of over 100 nm from 3329.9 nm to 3431.3 nm has been attained by adjusting both current and temperature. These results show that the V-coupled cavity ICLs are very promising for multi-species trace gas absorption spectroscopy with a high sensitivity.
Tunable V-Cavity Laser Based on Half-wave Multimode Interference Reflector

Qi Chen,Yuqing Jiao,Zhuping Fan,Jinsheng Ni,Jian-Jun He

DOI: https://doi.org/10.1117/12.2575010

2019-01-01

Abstract:We report a tunable V-cavity laser based on half-wave multimode interference reflector. Wavelength tuning of 39 channels is obtained with side mode suppression ratio around 38dB and the output power can reach 14mW.
Single-mode Interband Cascade Laser Based on V-coupled Cavity with 210 Nm Wavelength Tuning Range Near 3 Μm.

Jingli Gong,Zhanyi Wang,Jian -Jun He,Lu Li,Rui Q. Yang,James A. Gupta

DOI: https://doi.org/10.1364/oe.504209

IF: 3.8

2023-01-01

Optics Express

Abstract:Interband cascade lasers (ICLs) are efficient and compact mid-infrared (3-5 µm) light sources with many applications. By enhancing the coupling coefficient and using a type-I ICL wafer, single-mode ICLs were demonstrated based on V-coupled cavity with significantly extended tuning range and with a side mode suppression ratio (SMSR) exceeding 35 dB in continuous wave operation near 3 µm. A V-coupled cavity ICL exhibited a wavelength tuning up to 67 nm at a fixed temperature, and the total tuning range exceeds 210 nm when the heat sink temperature is adjusted from 80 to 180 K. The realization of single-mode in such a wide temperature range with a tuning range exceeding 210 nm verified the advantage of V-coupled cavity ICLs for effective detection of multiple gas species. This is very different from the conventional distributed feedback (DFB) laser where the single-mode operation is restricted to a narrow temperature range, in which the match between the gain peak and the DFB grating period determined wavelength is required. Another V-coupled cavity ICL is tuned over 120 nm from 2997.56 nm to 3117.50 nm with the heat-sink temperature varied from 210 K to 240 K, over 100 K higher than the previously reported maximum operating temperature for V-coupled cavity ICLs.
Widely Wavelength Switchable V-Coupled-Cavity Semiconductor Laser With Similar To 40 Db Side-Mode Suppression Ratio

Jialiang Jin,Lei Wang,Tingting Yu,Yin Wang,Jian-Jun He

DOI: https://doi.org/10.1364/OL.36.004230

IF: 3.6

2011-01-01

Optics Letters

Abstract:We report the first experimental demonstration of a single-electrode-controlled digitally wavelength switchable V-coupled-cavity laser with high side-mode-suppression-ratio (SMSR) in the 40 dB range. Sixteen-channel and twenty-six channel wavelength switchable lasers with 100 GHz spacing are demonstrated with the maximal SMSR of 40 dB and 37 dB, respectively. They do not require complex gratings, multiple epitaxial growths, or complex tuning algorithms. The device size is only 500 mu m x 300 mu m. Such a simple, compact, and high-performance laser has great potential as a low-cost alternative to existing complex tunable lasers for wide deployment in optical networks and beyond. (C) 2011 Optical Society of America
Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Jia Xu Brian Sia,Wanjun Wang,Zhongliang Qiao,Xiang Li,Xin Guo,Jin Zhou,Callum G. Littlejohns,Zecen Zhang,Chongyang Liu,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1364/oe.383524

IF: 3.8

2020-01-01

Optics Express

Abstract:In recent years, the 2 µm waveband has been gaining significant attention due to its potential in the realization of several key technologies, specifically, future long-haul optical communications near the 1.9 µm wavelength region. In this work, we present a hybrid silicon photonic wavelength-tunable diode laser with an operating range of 1881-1947 nm (66 nm) for the first time, providing good compatibility with the hollow-core photonic bandgap fiber and thulium-doped fiber amplifier. Room-temperature continuous-wave operation was achieved with a favorable on-chip output power of 28 mW. Stable single-mode lasing was observed with side-mode suppression ratio up to 35 dB. Besides the abovementioned potential applications, the demonstrated wavelength region will find critical purpose in H2O spectroscopic sensing, optical logic, signal processing as well as enabling the strong optical Kerr effect on Si.
Tunable Coupled-Cavity Semiconductor Laser Based on a Half-Wave Bow-Tie Coupler

Jia Guo,Yimin Xia,Xiaolu Liao,Jian-Jun He

DOI: https://doi.org/10.1364/ol.44.003526

IF: 3.6

2019-01-01

Optics Letters

Abstract:We propose and experimentally demonstrate a widely tunable coupled-cavity semiconductor laser based on a novel half-wave bow-tie coupler. The laser comprises two resonate cavities connected through the bow-tie coupler consisting of two back-to-back corner reflectors connected with a short waveguide, which produces a half-wave cross-coupling phase with an optimum coupling coefficient for achieving high mode selectivity. No complex grating or multiple epitaxial growth is needed. By tuning a single electrode at a fixed temperature, 29.6 nm wavelength tuning covering 38 channels with 100 GHz frequency spacing is achieved experimentally, with a side-mode suppression ratio of over 35 dB.

1650-nm-band Tunable V-Cavity Semiconductor Laser

Simple and Compact V-cavity Semiconductor Laser with 50×100 GHz Wavelength Tuning.

40Nm Quasi-Continuous Wavelength Tuning of V-cavity Semiconductor Laser

GaAs/AlGaAs-Based 870-Nm-band Widely Tunable Edge-Emitting V-Cavity Laser

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Tunable V-Cavity Semiconductor Laser And Modules

Tunable V-Cavity Laser Monolithically Integrated with Traveling Wave Mach-Zehnder Modulator

1310 nm V-cavity semiconductor laser with 38×100GHz tuning range

1310 Nm V-Cavity Semiconductor Laser With 38x100ghz Tuning Range

Full-Band Tunable V-Cavity Laser for Low-Cost Access and Data Center Networks

Quasi-Continuous Wavelength Tuning of Single-mode Interband Cascade Lasers Based on V-coupled Cavity

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches

Widely Tunable Electro-Absorption Modulated V-Cavity Laser

Multiple Gas Detection Using V-cavity Coupled Diode Laser

High Single-Mode Selectivity V-cavity Tunable Semiconductor Laser Based on GaAs

Single-Mode Tunable Interband Cascade Laser Emitting at 3.4 Μm with a Wide Tuning Range over 100 Nm

Tunable V-Cavity Laser Based on Half-wave Multimode Interference Reflector

Single-mode Interband Cascade Laser Based on V-coupled Cavity with 210 Nm Wavelength Tuning Range Near 3 Μm.

Widely Wavelength Switchable V-Coupled-Cavity Semiconductor Laser With Similar To 40 Db Side-Mode Suppression Ratio

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Tunable Coupled-Cavity Semiconductor Laser Based on a Half-Wave Bow-Tie Coupler