Ga/sub 0.66/in/sub 0.34/as/gainasp/inp Tensile-Strained Single-Quantum-well Lasers with 70-Nm Period Wire Active Region

K KUDO,Y NAGASHIMA,S TAMURA,S ARAI,Y HUANG,Y SUEMATSU

DOI: https://doi.org/10.1109/68.238236

IF: 2.6

1993-01-01

IEEE Photonics Technology Letters

Abstract:Fairly low threshold current operation was achieved with Ga0.66In0.34As/GaInAsP/InP tensile-strained (TS) single-quantum-well (SQW) lasers with 30 is similar to 40-nm-wide and 70-nm-period wire active region fabricated by a combination of a wet chemical etching and two-step OMVPE growths. Threshold current as low as 16 mA and threshold current density of 816 A/cm2 were obtained under a room temperature CW condition. By comparing the spontaneous emission peak wavelength of the TS-SQW wire laser with that of the TS-SQW film laser, an approximately 10-meV blue shift of the fundamental energy level was observed in the TS-SQW wire laser.