2.1 Μm InGaSb Quantum Well Lasers Exhibiting the Maximum Conversion Efficiency of 27.5% with Digitally Grown AlGaAsSb Barriers and Gradient Layers
Shengwen Xie,Chengao Yang,ShuShan Huang,Ye Yuan,Yi Zhang,Jinming Shang,Chenyuan Cai,Yu Zhang,Yingqiang Xu,Haiqiao Ni,Zhichuan Niu
DOI: https://doi.org/10.1016/j.spmi.2019.05.002
IF: 3.22
2019-01-01
Superlattices and Microstructures
Abstract:The 2.1-mu m-wavelength InGaSb/AlGaAsSb/GaSb double quantum well lasers, exhibiting a high performance with the peak output power of 1.62 W and the maximum conversion efficiency of 27.5%, had been grown by molecular-beam-epitaxy (MBE). Digitally grown AlxGa1-xAsSb barriers and grading layers were employed in the devices to increase the valence-band offset and to improve the simplicity and controllability of MBE growth. The quaternary digital alloys were grown with short-period superlattices (SPS) of AlSb, AlAs and GaSb and varieties of growth conditions such as growth temperature, interface control and growth rate were considered to get the high-quality crystal films. The digitally grown film was parametrically characterized by atomic force microscopy, high resolution X-ray and transmission electron microscope, showing a smooth surface, clear satellite peaks and clear growth cross sections, respectively. Besides the good power performance of the devices, a low threshold current density of 60 A/cm(2) was also achieved and the calculated differential resistance was 0.17 Omega.