808 Nm High-Power Lasers with Al-Free Active Region with Asymmetric Waveguide Structure
Li ZHONG,Jun WANG,Xiao-ming FENG,Yong-gang WANG,Cui-luan WANG,Lin HAN,Feng CHONG,Su-ping LIU,Xiao-yu MA
DOI: https://doi.org/10.3321/j.issn:0258-7025.2007.08.003
2007-01-01
Chinese Journal of Lasers
Abstract:Shifting of the optical mode from symmetric distribution to asymmetric distribution by separate confinement asymmetric waveguide structure reduces optical absorption loss by carriers,and permits higher doping of the p side to reduce resistance.Based on the theoretical analysis for the optical field distribution characteristics of GaAsP/GaInP tensile-strained single quantum well(SQW) lasers with asymmetric waveguide,the thickness of waveguide layers was optimized,and a high-power semiconductor laser with Al-free active region was fabricated and studied experimentally.For a 900 μm cavity length device,the typical threshold current density is 400 A/cm2,and a low internal loss around 1.0 cm-1 is achieved.Under continuous wave(CW) operation condition,150 μm aperture devices achieve a CW output power of 6 W,the maximum slope efficiency of the prepared devices is 1.25 W/A,and the lasing wavelength is 807.5 nm.Horizontal and vertical far-field divergence angles are 3.0° and 34.8°,respectively.The characteristic temperature of the laser in the range of 20～70 ℃ is estimated to be about 133 K.Separate confinement asymmetric waveguide structure is proven to be an impactful method for reducing optical loss and improving the characteristics of high power diode lasers.