980Nm InGaAs/AlGaAs Quantum Well High Power Semiconductor Laser with Narrow Vertical Divergence Angle
Zhongliang Qiao,XiangLi,Chongyang Liu,ZecenZhang,Qianqian Meng,Te Li,Jing Zhang,Zhanguo Li,Lin Li,Xiaohui Ma,Yi Qu,Xin Gao,BaoxueBo,Hong Wang
DOI: https://doi.org/10.1109/icoom.2015.7398846
2015-01-01
Abstract:High-power and narrow vertical divergence angle 980nm InGaAs/AlGaAs quantum well semiconductor lasers have important applications in optical fiber communications, medical and military fields and so on. Traditional semiconductor laser is difficult for obtaining satisfactory power output and beam quality simultaneously. Large optical cavity 980nm high power semiconductor laser (PBCHPLDs) with one-dimensional photonic crystal structure can achieve these excellent output characteristics. Its good beam quality, high output power, and high efficiency coupling with fiber, making such devices have an important value for application. Epitaxial structure of one-dimensional photonic crystal structure large cavity 980nm InGaAs/AlGaAs quantum well semiconductor laser, parameters of whose were optimized using crosslight PICS3D, including ohm value and output characteristics. The epitaxial structure and process parameters for fabrication of other wavelength high brightness semiconductor lasers have important reference value.