Abstract:Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence（PL） and deep level transient spectroscopy（DLTS）. The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation doses.Notably, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R 2 （Ec-0.51 eV） appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.

Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing

Formation of A Denuded Zone in Nitrogen-Doped Czochralski Silicon Wafer Treated by Ramping Anneals

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Role of Nitrogen Related Complexes in the Formation of Defects in Silicon

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

Nitrogen Effect on Hydrogen Penetration into Cz Si During Wet Chemical Etching

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Formation of Pnp Bipolar Structure by Thermal Donors in Nitrogen-Containing P-Type Czochralski Silicon Wafers

Formation of Silicon on Plasma Synthesized Aluminum Nitride Structure by Ion Cutting

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Structure Study of SiC Buried Layer by High Temperature C + Implantation

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Hrtem Study of SiC Buried Layer Formed by C+implantation in Silicon

Buried Cobalt Silicide Layer Under Thin Silicon Film Fabricated By Wafer Bonding And Hydrogen-Induced Delamination Techniques

Denuded Zone in Czochralski Silicon Wafer with High Carbon Content

Formation of SiC-surface layer by ion implantation

Optical Effects and Microstructure of Buried Insulator Layer Formed by O+ and N+ Co-implantation

Β-Sic Buried Layer Formed by CH4+Ar Plasma Implantation