Abstract:In this study, Al implantation in 4H-SiC at the dose of 1 × 10 14 cm −2 was investigated. The impacts of implantation temperature on the lattice quality, microstructure, surface composition, and band structure were all studied experimentally and theoretically. Atomic force microscope (AFM) images showed the difference in surface morphology between high-temperature and low-temperature implantation. Transmission electron microscopy (TEM) characterization indicated the lattice damage induced by implantation was recovered after the post-annealing at 1750 °C, except for the samples implanted at room temperature. X-ray photoelectron spectroscopy (XPS) analysis suggested an oxidation effect during and after the implantation process, and it was more serious at lower implantation temperatures. As the implantation temperature incremented, the ratio of Si-C composition with high binding energy increased, the element valence became closer to that of ideal Al-doped 4H-SiC calculated by density functional theory (DFT); and the Fermi level shifted toward the valence band maximum (VBM), demonstrating the formation of efficient p-type doping. A more obvious asymmetric broadening in Raman spectroscopy was observed at higher implantation temperature. The theoretically obtained band structures and bond lengths from DFT calculations corroborated the experimental results, providing physical insights into the possible effect mechanism. In sum, correlations between the implantation process, external material properties, and internal crystal structure were recorded, paving the way for further research and future applications.

Structure Study of SiC Buried Layer by High Temperature C + Implantation

Hrtem Study of SiC Buried Layer Formed by C+implantation in Silicon

X-Ray Characterization Of Beta-Sic Growth And Structural Modification Of Si By Mev Ion Implantation

Formation of SiC-surface layer by ion implantation

Low-temperature Epitaxial Growth of Β-Sic by Multiple-Energy Ion Implantation

X-ray and Fourier transformed infrared investigation of beta-SiC growth by ion implantation

Β-Sic Buried Layer Formed by CH4+Ar Plasma Implantation

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Electron Field Emission from SiC/Si Heterostructures Formed by Carbon Implantation into Silicon and Etching of the Top Silicon Layer

XTEM and IR Absorption Analysis of Silicon Carbide Prepared by High Temperature Carbon Implantation in Silicon

Silicon Carbide Formation by Methane Plasma Immersion Ion Implantation into Silicon

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Structural, electronic, and optical properties of 6H-SiC layers synthesized by implantation of carbon ions into silicon

Infrared Reflection Investigation of Ion‐implanted and Post‐implantation‐annealed Epitaxially Grown 6H‐sic

Surface and Interface Properties of Ion Implanted 4H-Silicon Carbide

FORMATION AND CHARACTERIZATION OF 3C-SIC BY CARBON-ION IMPLANTATION INTO SILICON WITH A MEVVA ION SOURCE

Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing

Ion Beam Synthesis of embedded SiC

Insights into the effects of Al-ion implantation temperature on material properties of 4H-SiC

The Effect of Cavities on Recrystallization Growth of High-Fluence He Implanted-Sic

Features of silicon carbide synthesis by cold implantation of carbon recoil atoms