Abstract:The paper reviews the latest advances in the growth of epitaxial SiC films on Si by the coordinated atomic substitution method. The conceptual issues and procedure of the new method for synthesizing epitaxial SiC films on Si are described. It is shown that this method significantly differs from the classical thin film growth schemes. Film growth in accordance with the classical mechanism is provided by deposition of atoms on the surface of a substrate. The new method consists in the coordinated atomic substitution of a portion of the atoms of the silicon matrix by carbon atoms to form an epitaxial silicon carbide film. The new growth method is compared with the classical thin film growth mechanisms. It is shown that the main distinctive feature of SiC films synthesized by this method is the formation of an excess concentration of silicon vacancies in it, whereas SiC grown by the standard methods comprises mostly carbon vacancies. It is shown that the interaction of carbon atoms and silicon vacancies leads to the formation of ordered ensembles of carbon–vacancy structures in SiC layers grown by the coordinated atomic substitution method. The formation of these structures is attributed to both the occurrence of a chemical substitution reaction and the contraction of the Si lattice cell during the transformation of it into a SiC lattice cell. The presence of carbon–vacancy structures in SiC imparts a number of new unique properties to the silicon carbide. In particular, a Si layer exhibiting the electronic properties of a "semimetal" is formed at the SiC–Si interface. In addition, carbon–vacancy structures provide unique optical, electrical, and magnetic properties. In particular, two quantum effects—a hysteresis of the static magnetic susceptibility and the occurrence of Aharonov–Bohm oscillations in the field dependences of the static magnetic susceptibility—are found to occur in weak magnetic fields at room temperature. The first of the effects is associated with the Meissner–Ochsenfeld effect; the second is associated with the presence of carbon–vacancy structures and microdefects in the form of nanotubes and micropores formed in these structures during SiC synthesis under the SiC layer.

Features of silicon carbide synthesis by cold implantation of carbon recoil atoms

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Structural, electronic, and optical properties of 6H-SiC layers synthesized by implantation of carbon ions into silicon

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Formation of SiC-surface layer by ion implantation

Ion Beam Synthesis of embedded SiC

Synthesis of Ultra-Thin Carbon Layers on Sic Substrate by Ion Implantation

Low-temperature Epitaxial Growth of Β-Sic by Multiple-Energy Ion Implantation

Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing

Silicon Carbide Formation by Methane Plasma Immersion Ion Implantation into Silicon

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions

Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Diffusion and impurity segregation in hydrogen-implanted silicon carbide

XPS studies on silicon carbonitride films prepared by sequential implantation of nitrogen and carbon into silicon

Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide langmuir-blodgett films on silicon substrate

X-Ray Characterization Of Beta-Sic Growth And Structural Modification Of Si By Mev Ion Implantation

Implantation of Carbon to Stabilize TiSi2 During Thermal Annealing

Low Temperature Synthesis of Β-Sic by a Metal Vapor Vacuum Arc Ion Source

Surface roughening in ion implanted 4H-silicon carbide