Abstract:During plasma spraying, SiC particles undergo sublimation, accompanied by the sublimation and decomposition of Si and C atoms in the crystal lattice. Ultimately, the deposited SiC either spreads splash or breaks apart on the surface of the carbon‐carbon composite matrix. It is widely known that silicon carbide (SiC) is challenging to thermal spray. However, the nature of deposition and the underlying mechanisms are still not clearly understood. In the current work, the process of atmospheric plasma‐sprayed SiC was investigated in detail. SiC exhibits sublimation severely under the plasma spraying (PS). More than 65 mol.% SiC particles lost by sublimation during PS estimated by calculation. Due to the nonuniformity of temperature in plasma flame, a small amount of SiC particles was retained. Moreover, a small amount of Si and SiO2 was experimentally observed after deposition process from the single‐splat characterization. According to the first‐principles calculations, the detachment energy of C atom from the lattice (0.591 eV) is lower than that of Si atom (1.257 eV). The adsorption energies of an O atom on the Si‐ and C‐terminated surfaces are −9.549 and −7.631 eV, respectively. Therefore, C is more likely to form gaseous products after decomposition, and Si is more likely to be retained to form Si and SiO2. Mullite was found on the grain boundaries of molten Si, which was attributed to the rapid diffusion of the Al2O3 substrate along the grain boundaries of Si, promoting the spreading of molten splats. It is difficult to stack particles through self‐diffusion among SiC particles to form coatings. The discovery on thermal deposition mechanism of SiC in PS is helpful to promote the practical application of SiC coatings on preparation optimization and interfacial bonding improvement.

Β-Sic Buried Layer Formed by CH4+Ar Plasma Implantation

Structure Study of SiC Buried Layer by High Temperature C + Implantation

Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

Hrtem Study of SiC Buried Layer Formed by C+implantation in Silicon

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Silicon Carbide Formation by Methane Plasma Immersion Ion Implantation into Silicon

Carbon - Silicon Heterojunction Diodes Formed by CH4/ Ar Rf Plasma Thin Film Deposition on Si Substrates

Growth and Chemical Thermodynamics Analysis of SiC Film on Si Substrate by Heating Polystyrene/Silica Bilayer Method

X-Ray Characterization Of Beta-Sic Growth And Structural Modification Of Si By Mev Ion Implantation

Fabrication of silicon carbide thin films by plasma immersion ion implantation with self-ignited glow discharge

Study of ion bombardment of SiC ceramics: surface and interfacial reaction modification

Formation of SiC-surface layer by ion implantation

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Studies on SiC film deposited by pulsed XeCl excimer laser sputtering method

SiC Formation at the Interface of Polyimide Langmuir–Blodgett Film and Silicon

Low-temperature Epitaxial Growth of Β-Sic by Multiple-Energy Ion Implantation

Effects of Mesh-Assisted Carbon Plasma Immersion Ion Implantation on the Surface Properties of Insulating Silicon Carbide Ceramics

XPS Analysis of Silicon Oxycarbide Formed on the Surface of Rf-Sputter Deposited SiC Thin Films

Deposition behavior and mechanism of thermal sprayed SiC

Optical Effects of Buried Conductive Layers Formed by MeV Ion Implantation