Abstract:Although zinc oxide is a promising material for the fabrication of short wavelength optoelectronic devices, p-type doping is a step that remains challenging for the realization of diodes. Out of equilibrium methods such as ion implantation are expected to dope ZnO successfully provided that the non-radiative defects introduced by implantation can be annealed out. In this study, ZnO substrates are implanted with nitrogen ions, and the extended defects induced by implantation are studied by transmission electron microscopy and X-ray diffraction (XRD), before and after annealing at 900^{\circ}C. Before annealing, these defects are identified to be dislocation loops lying either in basal planes in high N concentration regions, or in prismatic planes in low N concentration regions, together with linear dislocations. An uniaxial deformation of 0.4% along the c axis, caused by the predominant basal loops, is measured by XRD in the implanted layer. After annealing, prismatic loops disappear while the density of basal loops decreases and their diameter increases. Moreover, dislocation loops disappear completely from the sub-surface region. XRD measurements show a residual deformation of only 0.05% in the implanted and annealed layer. The fact that basal loops are favoured against prismatic ones at high N concentration or high temperature is attributed to a lower stacking fault energy in these conditions. The coalescence of loops and their disappearance in the sub-surface region are ascribed to point defect diffusion. Finally, the electrical and optical properties of nitrogen-implanted ZnO are correlated with the observed structural features.

Optical Effects and Microstructure of Buried Insulator Layer Formed by O+ and N+ Co-implantation

Auger-Electron and Ir Spectroscopic Studies of Soi Structure Formed by Oxygen and Nitrogen Implantation

AUGER ELECTRON SPECTROSCOPIC STUDIES OF INTERFA CE AND BURIED LAYER OF SOI STRUCTURE FORMED BY ION IMPLANTATION

Computer Simulation for the Formation of the Insulator Layer of Silicon-On-Insulator Devices by N+ and O+ Co-Implantation

Optical Effects of Buried Conductive Layers Formed by MeV Ion Implantation

Infrared absorption and reflection spectroscopic studies of SOI structures formed by oxygen or nitrogen implantation

Optical Characteristics of Multilayer Structures Formed by Ion-Beam Synthesis and Their Computer-Simulation

Optical Effects of Doped Top Layers in Silicon-on-insulator Structures Formed by Ion Implantation

Fabrication of SOI Structure with AlN Film As Buried Insulator by Ion-Cut Process

Fabrication of Silicon-on-Insulator Structure with Si3N4 As Buried Insulating Films by Epitaxial Layer Transfer

Nitrogen Ion-implantation in Silicon

Structural, Optical and Dielectric Properties of (co and Sm) Co-Implanting O-polar ZnO Films on Sapphire Substrate

Soi Structures Produced By Oxygen Ion-Implantation And Their Annealing Behavior

Structure Study of SiC Buried Layer by High Temperature C + Implantation

Hrtem Study of SiC Buried Layer Formed by C+implantation in Silicon

Intense UV-visible Photoluminescence from Si/sup +/ and N/sup +/ Co-Implanted Thermal SiO/sub 2/ Films

Optical Properties and Microstructure of Silicon Nitride Film Synthesized by Ion Beam Enhanced Deposition

Thermal Stability and Interface Improvement of Thin Nisige by C+ Ion Implantation

Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

Effect of Erbium Incorporation on SiNxOy/c-Si Interface in Silicon-Based Optoelectronic Devices

Optical Characterization of Doped Top Layers in SOI Structures Formed by Ion Implantation