Abstract:Recently, carbon nanotube field-effect transistors (CNTFETs) have garnered significant attention from VLSI engineers due to their exceptional electrical properties. This paper proposes a novel high-speed, low-power eight-transistor (8 T) static random-access memory (SRAM) cell based on 32-nm CNTFET technology. The SRAM cell was simulated using the HSPICE tool with a V DD of 0.9 V. The high-speed and low-power characteristics of the SRAM design are attributed to the high subthreshold slope and high carrier mobility of metal-oxide-semiconductor field-effect transistor (MOSFET)-like CNTFETs utilized in the simulations. The implementation of dual threshold transistors, coupled with a transmission gate for bitline access, contributes to the enhanced performance. Key performance metrics such as noise margins, power consumption, delay, and SRAM electrical quality metric (SEQM) of the proposed SRAM have been evaluated and compared with existing CNTFET-based SRAM designs. The proposed cell demonstrates reductions of 73.73%, 43.18%, and 58.70% in read power, write power, and hold power, respectively, compared to the lowest respective power values of other examined SRAM designs. The proposed SRAM ranks second, third, and second in write static noise margin (WSNM), hold static noise margin (HSNM), and read static noise margin (RSNM), respectively, among other designs. Additionally, the proposed SRAM exhibits the least sensitivity to parametric variations compared to other designs. The SEQM, which provides a comprehensive assessment of access times, noise margins, and power usage for the SRAM cell, has been calculated. The SEQM of the proposed SRAM is 10.6, 1.89, 13.15, and 1.82 times higher than that of C6T, BLP8T, Mani's 10 T, and LP8T, respectively.

An ultra-low-supply-voltage ultra-low-power subthreshold SRAM bitcell design

An Ultra-Low Leakage Bitcell Structure with the Feedforward Self-Suppression Scheme for Near-Threshold SRAM.

An Ultra-Low-power 1 Kb Sub-Threshold SRAM in the 180 Nm CMOS Process

A 320 Mv, 6 Kb Subthreshold 10T SRAM Employing Voltage Lowering Techniques

An Ultra-Low-Voltage Bit-Interleaved Synthesizable 13T SRAM Circuit.

Ultra8T: A Sub-Threshold 8T SRAM with Leakage Detection

A novel low power 64-kb SRAM using bit-lines charge-recycling and non-uniform cell scheme

A Half-Select Disturb-Free 11T SRAM Cell with Built-In Write/Read-Assist Scheme for Ultralow-Voltage Operations

A 40-Nm Ultra-Low Leakage Voltage-Stacked SRAM for Intelligent IoT Sensors

A Disturb-Free 10T SRAM Cell with High Read Stability and Write Ability for Ultra-Low Voltage Operations

Low Voltage SRAM Cell Suitable for Bit-Interleaved Structure

A low active and leakage power SRAM using a read and write divided and BIST programmable timing control circuit

A Design of Subthreshold SRAM Cell Based on RSCE and RNCE.

A Highly Reliable and Low-Power Cross-Coupled 18T SRAM Cell

A 0.2 V-1.8 V 8T SRAM with Bit-interleaving Capability.

An Ultra-Dynamic Voltage Scalable (U-DVS) SRAM Design

A Novel Hybrid Nonvolatile SRAM for Suppressing Leakage Power Using Tunnel FET

A 0.33 V 2.5 Μw Cross-Point Data-Aware Write Structure, Read-Half-select Disturb-Free Sub-Threshold SRAM in 130 Nm CMOS

A Leakage Current Suppression Technique for Cascade SRAM Array in 55 Nm CMOS Technology

Bit-Interleaving-Enabled 8t Sram with Shared Data-Aware Write and Reference-Based Sense Amplifier

Design analysis of a low-power, high-speed 8 T SRAM cell using dual-threshold CNTFETs